Processing

Please wait...

Settings

Settings

Goto Application

1. WO2006096221 - LOW REFRACTIVE INDEX POLYMERS AS UNDERLAYERS FOR SILICON-CONTAINING PHOTORESISTS

Publication Number WO/2006/096221
Publication Date 14.09.2006
International Application No. PCT/US2005/043210
International Filing Date 30.11.2005
IPC
G03C 1/76 2006.01
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
CPHOTOSENSITIVE MATERIALS FOR PHOTOGRAPHIC PURPOSES; PHOTOGRAPHIC PROCESSES, e.g. CINE, X-RAY, COLOUR OR STEREO-PHOTOGRAPHIC PROCESSES; AUXILIARY PROCESSES IN PHOTOGRAPHY
1Photosensitive materials
76Photosensitive materials characterised by the base or auxiliary layers
CPC
G03F 7/091
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004Photosensitive materials
09characterised by structural details, e.g. supports, auxiliary layers
091characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
G03F 7/094
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004Photosensitive materials
09characterised by structural details, e.g. supports, auxiliary layers
094Multilayer resist systems, e.g. planarising layers
Applicants
  • INTERNATIONAL BUSINESS MACHINES CORPORATION [US]/[US] (AllExceptUS)
  • HUANG, Wu-song [US]/[US] (UsOnly)
  • BURNS, Sean [US]/[US] (UsOnly)
  • KHOJASTEH, Mahmoud [US]/[US] (UsOnly)
Inventors
  • HUANG, Wu-song
  • BURNS, Sean
  • KHOJASTEH, Mahmoud
Agents
  • CAPELLA, Steven
Priority Data
11/013,97116.12.2004US
11/195,56602.08.2005US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) LOW REFRACTIVE INDEX POLYMERS AS UNDERLAYERS FOR SILICON-CONTAINING PHOTORESISTS
(FR) POLYMERES A FAIBLE INDICE DE REFRACTION UTILISES EN TANT QUE SOUS-COUCHES DANS DES PHOTORESISTS CONTENANT DU SILICIUM
Abstract
(EN)
A new underlayer composition that exhibits high etch resistance and improved optical properties is disclosed. The underlayer composition comprises a vinyl or acrylate polymer, such as a methacrylate polymer, the polymer comprising at least one substituted or unsubstituted naphthalene or naphthol moiety, including mixtures thereof. Examples of the polymer of this invention include: formula (I), (II), (III), (IV), where each R1 is independently selected from an organic moiety or a halogen; each A is independently a single bond or an organic moietry; R2 is hydrogen or a methyl group; and each X, Y and Z is an integer of 0 to 7, and Y+Z is / or less. The organic moiety mentioned above may be a substituted or unsubtituted hydrocarbon selected from the group consisting of a linear or branched alkyl, halogenated linear or branched alkyl, aryl, halogenated aryl, cyclic alkyl, and halogenated cyclic alkyl, and any combination thereof. The compositions are suitable for use as planarizing underlayer in a multilayer lithographic process, including a trilayer lothographic process.
(FR)
L’invention décrit une nouvelle composition de sous-couche qui fait preuve d’une résistance élevée à la gravure et de propriétés optiques améliorées. Ladite composition comprend un polymère de vinyle ou d’acrylate, par exemple un polymère méthacrylate, le polymère comprenant au moins un groupement naphtalène ou naphtol substitué ou non substitué, y compris un mélange de ces groupements. Des exemples du polymère de l’invention incluent : formules (I), (II), (III), (IV), dans lesquelles chaque R1 est indépendamment un groupement organique ou un halogène ; chaque A est indépendamment une liaison simple ou un groupement organique ; R2 est l’hydrogène ou un groupe méthyle ; enfin X, Y et Z sont chacun un entier de 0 à 7 et Y + Z est inférieur ou égal à /. Le groupement organique susmentionné peut être un hydrocarbure substitué ou non substitué choisi dans le groupe formé d'un alkyle linéaire ou ramifié, d’un alkyle halogéné linéaire ou ramifié, d’un aryle, d’un aryle halogéné, d’un alkyle cyclique, d’un alkyle cyclique halogéné et d’une quelconque de leurs combinaison. Les compositions sont appropriées pour former la sous-couche d’aplanissement dans un procédé lithographique multicouche, notamment tricouche.
Also published as
Latest bibliographic data on file with the International Bureau