Processing

Please wait...

Settings

Settings

Goto Application

1. WO2006096138 - INTEGRATED MASK

Publication Number WO/2006/096138
Publication Date 14.09.2006
International Application No. PCT/SG2006/000051
International Filing Date 09.03.2006
Chapter 2 Demand Filed 11.09.2006
IPC
H01L 51/56 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50specially adapted for light emission, e.g. organic light emitting diodes (OLED) or polymer light emitting devices (PLED)
56Processes or apparatus specially adapted for the manufacture or treatment of such devices or of parts thereof
B81C 1/00 2006.01
BPERFORMING OPERATIONS; TRANSPORTING
81MICROSTRUCTURAL TECHNOLOGY
CPROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
1Manufacture or treatment of devices or systems in or on a substrate
H01L 21/285 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
28Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/268158
283Deposition of conductive or insulating materials for electrodes
285from a gas or vapour, e.g. condensation
CPC
H01L 51/0011
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
0001Processes specially adapted for the manufacture or treatment of devices or of parts thereof
0002Deposition of organic semiconductor materials on a substrate
0008using physical deposition, e.g. sublimation, sputtering
0011selective deposition, e.g. using a mask
Applicants
  • AGENCY FOR SCIENCE, TECHNOLOGY AND RESEARCH [SG]/[SG] (AllExceptUS)
  • HUANG, Zhaohong [SG]/[SG] (UsOnly)
  • QI, Guojun [SG]/[SG] (UsOnly)
  • ZENG, Xianting [SG]/[SG] (UsOnly)
Inventors
  • HUANG, Zhaohong
  • QI, Guojun
  • ZENG, Xianting
Agents
  • ELLA CHEONG SPRUSON & FERGUSON (SINGAPORE) PTE LTD
Priority Data
200501482-409.03.2005SG
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) INTEGRATED MASK
(FR) MASQUE INTÉGRÉ
Abstract
(EN)
An integrated mask structure (200) for a substrate (213), the structure comprising a pillar structure (202) formed on the substrate, and at least one gap structure (206a,b) extending along the pillar structure, wherein a portion of a wall surface (207a,b) of each gap structure is not in a line of sight from outside of the gap structure, said portion of the wall surface extending along the pillar structure. The gap structure reduces the occurrence of shorting between electrodes deposited using the integrated mask. The mask may be used in the manufacture of OLED devices, flat panel displays, photo-detector arrays and micro-electro-mechanical (MEMS) systems.
(FR)
L’invention concerne une structure de masque intégré (200) pour un substrat (213), la structure comprenant une structure à piliers (202) formée sur le substrat, et au moins une structure d’entrefer (206a,b) suivant la structure à piliers, une portion de surface de paroi (207a,b) de chaque structure d’entrefer n’étant pas située dans un axe de visibilité depuis l’extérieur de la structure d’entrefer, ladite portion de la surface de paroi suivant la structure à piliers. La structure d’entrefer réduit la fréquence des courts-circuits entre les électrodes déposées à l’aide du masque intégré. On peut utiliser le masque dans la fabrication de dispositifs OLED, d’affichages à panneau plat, de matrices de photodétecteurs et de systèmes micro-électromécaniques (MEMS).
Also published as
EP6717175
Latest bibliographic data on file with the International Bureau