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1. WO2006096009 - HIGH-PRESSURE HYDROGEN ANNEALING FOR MOSFET

Publication Number WO/2006/096009
Publication Date 14.09.2006
International Application No. PCT/KR2006/000817
International Filing Date 08.03.2006
IPC
H01L 21/336 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
334Multistep processes for the manufacture of devices of the unipolar type
335Field-effect transistors
336with an insulated gate
CPC
E02F 3/413
EFIXED CONSTRUCTIONS
02HYDRAULIC ENGINEERING; FOUNDATIONS; SOIL SHIFTING
FDREDGING; SOIL-SHIFTING
3Dredgers; Soil-shifting machines
04mechanically-driven
28with digging tools mounted on a dipper- or bucket-arm ; , i.e. there is either one arm or a pair of arms; , e.g. dippers, buckets
36Component parts
40Dippers; Buckets ; Grab device, e.g. manufacturing processes for buckets, form, geometry, material of buckets
413with grabbing device
H01L 21/28176
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
28Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
28008Making conductor-insulator-semiconductor electrodes
28017the insulator being formed after the semiconductor body, the semiconductor being silicon
28158Making the insulator
28167on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
28176with a treatment, e.g. annealing, after the formation of the definitive gate conductor
H01L 21/28194
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
28Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
28008Making conductor-insulator-semiconductor electrodes
28017the insulator being formed after the semiconductor body, the semiconductor being silicon
28158Making the insulator
28167on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
28194by deposition, e.g. evaporation, ALD, CVD, sputtering, laser deposition
H01L 21/3003
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
3003Hydrogenation or deuterisation, e.g. using atomic hydrogen from a plasma
H01L 29/4966
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
40Electrodes ; ; Multistep manufacturing processes therefor
43characterised by the materials of which they are formed
49Metal-insulator-semiconductor electrodes, ; e.g. gates of MOSFET
4966the conductor material next to the insulator being a composite material, e.g. organic material, TiN, MoSi2
H01L 29/517
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
40Electrodes ; ; Multistep manufacturing processes therefor
43characterised by the materials of which they are formed
49Metal-insulator-semiconductor electrodes, ; e.g. gates of MOSFET
51Insulating materials associated therewith
517the insulating material comprising a metallic compound, e.g. metal oxide, metal silicate
Applicants
  • GWANGJU INSTITUTE OF SCIENCE AND TECHNOLOGY [KR]/[KR] (AllExceptUS)
  • HWANG, Hyun-Sang [KR]/[KR] (UsOnly)
Inventors
  • HWANG, Hyun-Sang
Agents
  • HWANG, E-Nam
Priority Data
10-2005-001919208.03.2005KR
Publication Language English (EN)
Filing Language Korean (KO)
Designated States
Title
(EN) HIGH-PRESSURE HYDROGEN ANNEALING FOR MOSFET
(FR) RECUISSON A L'HYDROGENE SOUS HAUTE PRESSION POUR MOSFET
Abstract
(EN)
The present invention relates to a high pressure hydrogen annealing method for MOSFET semiconductor device, and more particularly, to effectively remove a supersaturated hydrogen on a high-k insulating layer treated by a high pressure hydrogen annealing so that the reliability of a device is improved. In other words, in order to decrease an interfacial charge, it is required to perform a high density and a high pressure hydrogen annealing. In this case, a hydrogen is included at an interface and a bulk of a high-k insulating layer, resulting in improving the initial operational characteristics of a device by passivating interfacial charge existing at an interface, but deteriorating the reliability of a device due to the hydrogen remaining in the insulating bulk. Therefore, in the present invention, a high pressure hydrogen annealing is performed and the subsequent annealing is performed under an inert gas atmosphere for a long time to effectively remove hydrogen molecules remaining at the bulk.
(FR)
La présente invention concerne un procédé de recuisson à l'hydrogène sous haute pression pour un dispositif à semiconducteur MOSFET, notamment pour éliminer efficacement un hydrogène sursaturé présent sur une couche isolante à constante élevée traitée par recuisson à l'hydrogène sous haute pression de façon à améliorer la fiabilité du dispositif. En d'autres termes, pour augmenter une charge interfacielle, il est nécessaire d'effectuer une recuisson à l'hydrogène à haute densité et haute pression. Pour cela, un hydrogène est inclus au niveau d'une interface et dans un substrat d'une couche isolante à constante élevée, ce qui améliore le caractéristiques fonctionnelles initiales d'un dispositif par passivation de la charge interfacielle existante au niveau d'une interface, mais dégrade la fiabilité du dispositif à cause de l'hydrogène restant dans le substrat isolant. Ainsi, selon le procédé de l'invention, une recuisson à l'hydrogène sous haute pression est réalisée, et la recuisson subséquente est accomplie dans une atmosphère de gaz inerte pendant une longue durée, aux fins d'éliminer les molécules d'hydrogène restant au niveau du substrat.
Also published as
EP6716267
Latest bibliographic data on file with the International Bureau