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1. WO2006095791 - ELEMENT SUBSTRATE, INSPECTING METHOD, AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

Publication Number WO/2006/095791
Publication Date 14.09.2006
International Application No. PCT/JP2006/304519
International Filing Date 02.03.2006
IPC
G01R 31/308 2006.01
GPHYSICS
01MEASURING; TESTING
RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
31Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
28Testing of electronic circuits, e.g. by signal tracer
302Contactless testing
308using non-ionising electromagnetic radiation, e.g. optical radiation
H01L 21/822 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
78with subsequent division of the substrate into plural individual devices
82to produce devices, e.g. integrated circuits, each consisting of a plurality of components
822the substrate being a semiconductor, using silicon technology
H01L 27/04 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04the substrate being a semiconductor body
CPC
G01R 31/2822
GPHYSICS
01MEASURING; TESTING
RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
31Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
28Testing of electronic circuits, e.g. by signal tracer
282Testing of electronic circuits specially adapted for particular applications not provided for elsewhere
2822of microwave or radiofrequency circuits
G01R 31/2886
GPHYSICS
01MEASURING; TESTING
RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
31Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
28Testing of electronic circuits, e.g. by signal tracer
2851Testing of integrated circuits [IC]
2886Features relating to contacting the IC under test, e.g. probe heads; chucks
G01R 31/3025
GPHYSICS
01MEASURING; TESTING
RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
31Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
28Testing of electronic circuits, e.g. by signal tracer
302Contactless testing
3025Wireless interface with the DUT
H01L 27/13
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
12the substrate being other than a semiconductor body, e.g. an insulating body
13combined with thin-film or thick-film passive components
Applicants
  • SEMICONDUCTOR ENERGY LABORATORY CO., LTD. [JP]/[JP] (AllExceptUS)
  • KATO, Kiyoshi [JP]/[JP] (UsOnly)
  • IZUMI, Konami (UsOnly)
  • HAYAKAWA, Masahiko (UsOnly)
  • KAMATA, Koichiro (UsOnly)
Inventors
  • KATO, Kiyoshi
  • IZUMI, Konami
  • HAYAKAWA, Masahiko
  • KAMATA, Koichiro
Priority Data
2005-06171707.03.2005JP
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) ELEMENT SUBSTRATE, INSPECTING METHOD, AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
(FR) SUBSTRAT D’ELEMENT, PROCEDE DE VERIFICATION ET PROCEDE DE FABRICATION D’UN DISPOSITIF A SEMI-CONDUCTEUR
Abstract
(EN)
A substrate including a semiconductor layer, where characteristics of an element can be evaluated with high reliability, and an evaluating method thereof are provided. A substrate including a semiconductor layer of the invention has a closed-loop circuit in which an antenna coil and a semiconductor element are connected in series, and a surface of an area over which the circuit is formed is covered with an insulating film. By using such a circuit, a contactless inspection can be carried out. Further, a ring oscillator can be substituted for the closed-loop circuit.
(FR)
L’invention concerne un substrat comprenant une couche semi-conductrice qui permet d’évaluer les caractéristiques d’un élément en toute fiabilité, ainsi que le procédé d’évaluation correspondant. Ledit substrat comprenant une couche semi-conductrice possède un circuit en boucle fermée dans lequel une bobine d’antenne et un élément semi-conducteur sont montés en série. La surface de la zone sur laquelle se trouve le circuit est couverte d’un film isolant. Un contrôle sans contact peut être effectué en utilisant un tel circuit. Un oscillateur en anneau peut également remplacer un circuit en boucle fermée.
Also published as
EP6728788
Latest bibliographic data on file with the International Bureau