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1. WO2006095733 - AMORPHOUS TRANSPARENT CONDUCTIVE FILM, TARGET AND PRODUCTION METHOD FOR AMORPHOUS CONDUCTIVE FILM

Publication Number WO/2006/095733
Publication Date 14.09.2006
International Application No. PCT/JP2006/304373
International Filing Date 07.03.2006
IPC
H01B 5/14 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
5Non-insulated conductors or conductive bodies characterised by their form
14comprising conductive layers or films on insulating-supports
C23C 14/34 2006.01
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
22characterised by the process of coating
34Sputtering
H01B 13/00 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
13Apparatus or processes specially adapted for manufacturing conductors or cables
CPC
C23C 14/3414
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
22characterised by the process of coating
34Sputtering
3407Cathode assembly for sputtering apparatus, e.g. Target
3414Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
C23C 16/40
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
22characterised by the deposition of inorganic material, other than metallic material
30Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
40Oxides
C23C 16/407
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
22characterised by the deposition of inorganic material, other than metallic material
30Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
40Oxides
407of zinc, germanium, cadmium, indium, tin, thallium or bismuth
Applicants
  • 出光興産株式会社 IDEMITSU KOSAN CO., LTD. [JP]/[JP] (AllExceptUS)
  • 島根 幸朗 SHIMANE, Yukio [JP]/[JP] (UsOnly)
  • 井上 一吉 INOUE, Kazuyoshi [JP]/[JP] (UsOnly)
  • 松原 雅人 MATSUBARA, Masato [JP]/[JP] (UsOnly)
  • 田中 信夫 TANAKA, Nobuo [JP]/[JP] (UsOnly)
  • 笘井 重和 TOMAI, Shigekazu [JP]/[JP] (UsOnly)
  • 矢野 公規 YANO, Koki [JP]/[JP] (UsOnly)
  • 松崎 滋夫 MATSUZAKI, Shigeo [JP]/[JP] (UsOnly)
Inventors
  • 島根 幸朗 SHIMANE, Yukio
  • 井上 一吉 INOUE, Kazuyoshi
  • 松原 雅人 MATSUBARA, Masato
  • 田中 信夫 TANAKA, Nobuo
  • 笘井 重和 TOMAI, Shigekazu
  • 矢野 公規 YANO, Koki
  • 松崎 滋夫 MATSUZAKI, Shigeo
Agents
  • 渡辺 喜平 WATANABE, Kihei
Priority Data
2005-06482209.03.2005JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) AMORPHOUS TRANSPARENT CONDUCTIVE FILM, TARGET AND PRODUCTION METHOD FOR AMORPHOUS CONDUCTIVE FILM
(FR) FILM CONDUCTEUR TRANSPARENT AMORPHE, CIBLE ET PROCÉDÉ DE FABRICATION POUR FILM CONDUCTEUR AMORPHE
(JA) 非晶質透明導電膜、ターゲット及び非晶質透明導電膜の製造方法
Abstract
(EN)
An amorphous transparent conductive film, a target and a production method for an amorphous transparent conductive film. While various display units actively have been introduced into OA apparatuses recently, display units have a structure of sandwiching a display element between transparent conductive films. Currently, an ITO film is mainly used as the transparent conductive film, but it has a damaged wiring problem because strong acid is used for etching. Although an attempt is being made to form an ITO film in the form of an amorphous film at low temperature and etch it with weak acid, but this method has a high resistance problem in an amorphous condition. The above problem is resolved by using an amorphous transparent conductive film or the like that satisfies the relation A>B when the maximum value of (RDF) at an interatomic distance of 0.30-0.36 nm in a radial distribution function (RDF) determined by X-ray scattering measuring is A, and a maximum value of (RDF) at an interatomic distance of 0.36-0.42 nm is B.
(FR)
L’invention concerne un film conducteur transparent amorphe, une cible et un procédé de fabrication pour un film conducteur transparent amorphe. Depuis peu, diverses unités d’affichage ont été activement introduites dans des appareils QA, ces unités d’affichage ayant une structure de prise en sandwich d’un élément d’affichage entre des films conducteurs transparents. A l’heure actuelle, on utilise principalement un film ITO comme film conducteur transparent, mais il présente un problème d’endommagement de câblage parce que l’on utilise un acide puissant pour la gravure. Même si l’on essaie de constituer un film ITO sous forme de film amorphe à basse température et de le graver avec un acide faible, ce procédé pose un problème de résistance élevée dans une condition amorphe. Le problème ci-dessus est résolu grâce à un film conducteur transparent amorphe ou autre qui satisfait à la relation A>B lorsque la valeur maximale de (RDF) à une distance interatomique comprise entre 0,30 et 0,36 nm dans une fonction de distribution radiale (RDF) déterminée par une mesure de diffraction par rayons X est A, et une valeur maximale de (RDF) à une distance interatomique comprise entre 0,36 et 0,42 nm est B.
(JA)
not available
Latest bibliographic data on file with the International Bureau