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1. WO2006095643 - POLISHING PAD

Publication Number WO/2006/095643
Publication Date 14.09.2006
International Application No. PCT/JP2006/304050
International Filing Date 03.03.2006
IPC
H01L 21/304 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
304Mechanical treatment, e.g. grinding, polishing, cutting
B24B 37/20 2012.01
BPERFORMING OPERATIONS; TRANSPORTING
24GRINDING; POLISHING
BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
37Lapping machines or devices; Accessories
11Lapping tools
20Lapping pads for working plane surfaces
CPC
B24B 37/24
BPERFORMING OPERATIONS; TRANSPORTING
24GRINDING; POLISHING
BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING
37Lapping machines or devices; Accessories
11Lapping tools
20Lapping pads for working plane surfaces
24characterised by the composition or properties of the pad materials
Applicants
  • 日本ミクロコーティング株式会社 NIHON MICROCOATING CO., LTD. [JP]/[JP] (AllExceptUS)
  • 小林 俊裕 KOBAYASHI, Toshihiro [JP]/[JP] (UsOnly)
  • 泉 敏裕 IZUMI, Toshihiro [JP]/[JP] (UsOnly)
  • 田村 淳 TAMURA, Jun [JP]/[JP] (UsOnly)
  • 永峯 拓也 NAGAMINE, Takuya [JP]/[JP] (UsOnly)
  • 荒幡 高志 ARAHATA, Takashi [JP]/[JP] (UsOnly)
Inventors
  • 小林 俊裕 KOBAYASHI, Toshihiro
  • 泉 敏裕 IZUMI, Toshihiro
  • 田村 淳 TAMURA, Jun
  • 永峯 拓也 NAGAMINE, Takuya
  • 荒幡 高志 ARAHATA, Takashi
Agents
  • 竹内 澄夫 TAKEUCHI, Sumio
Priority Data
2005-06173507.03.2005JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) POLISHING PAD
(FR) TAMPON A POLIR
(JA) 研磨パッド
Abstract
(EN)
A polishing pad is provided for uniformly planarizing a wafer surface in a short time. The polishing pad (10) is composed of a pad main body (11) having a polishing surface and a lining (12) fixed on a rear surface of the pad main body (11). The elastic modulus of the pad main body (11) is within a range of 600psi-16,000psi, preferably 1,600psi-16,000psi, when a compression pressure of 2psi to 16psi is applied. The thickness of the pad main body (11) is within a range of 0.5mm-3.0mm. The elastic modulus of the lining (12) is within a range lower than the elastic modulus of the pad main body (11) but higher than 300psi, when the above mentioned compression pressure is applied.
(FR)
L’invention concerne un tampon à polir pour aplanir uniformément la surface d'une plaque en peu de temps. Le tampon à polir (10) se compose d'une partie principale (11) qui comporte une surface à polir et un revêtement (12) fixé sur une surface à l’arrière de la partie principale (11). Le module élastique de la partie principale (11) se trouve entre 600 psi et 16 000 psi, de préférence entre 1 600 psi et 16 000 psi, lors de l’application d’une pression de compression dont la valeur est située entre 2 psi et 16 psi. L’épaisseur de la partie principale (11) varie entre 0,5 mm et 3,0 mm. Le module élastique du revêtement (12) se trouve dans un intervalle inférieur à celui de la partie principale (11) mais supérieur à 300 psi, lorsque le niveau de compression mentionné ci-dessus est appliqué.
(JA)
 ウエハの表面を短時間で均一に平坦化できる研磨パッドを提供することである。研磨面を有するパッド本体11と、パッド本体11の裏面に固定した裏当て12とから構成される研磨パッド10。パッド本体11の弾性率は、2psiから16psiの圧縮圧力をかけたときに、600psi~16000psiの間の範囲にあり、望ましくは1600psi~16000psiの間の範囲にある。パッド本体11の厚さは、0.5mm~3.0mmの間の範囲ある。裏当て12の弾性率は、上記の圧縮圧力をかけたときに、パッド本体11の弾性率よりも低く且つ300psiを超える範囲にある。
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