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1. WO2006095560 - METHOD OF SUBSTRATE TREATMENT, RECORDING MEDIUM AND SUBSTRATE TREATING APPARATUS

Publication Number WO/2006/095560
Publication Date 14.09.2006
International Application No. PCT/JP2006/302928
International Filing Date 20.02.2006
IPC
H01L 21/316 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
31to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers; Selection of materials for these layers
314Inorganic layers
316composed of oxides or glassy oxides or oxide-based glass
H01L 21/31 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
31to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers; Selection of materials for these layers
C23C 16/455 2006.01
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
44characterised by the method of coating
455characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
CPC
C23C 16/405
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
22characterised by the deposition of inorganic material, other than metallic material
30Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
40Oxides
405of refractory metals or yttrium
C23C 16/407
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
22characterised by the deposition of inorganic material, other than metallic material
30Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
40Oxides
407of zinc, germanium, cadmium, indium, tin, thallium or bismuth
C23C 16/45544
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
44characterised by the method of coating
455characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
45523Pulsed gas flow or change of composition over time
45525Atomic layer deposition [ALD]
45544characterized by the apparatus
H01J 37/3244
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
32Gas-filled discharge tubes, ; e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions
32431Constructional details of the reactor
3244Gas supply means
H01J 37/32568
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
32Gas-filled discharge tubes, ; e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions
32431Constructional details of the reactor
32532Electrodes
32568Relative arrangement or disposition of electrodes; moving means
H01J 37/32935
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
32Gas-filled discharge tubes, ; e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions
32917Plasma diagnostics
32935Monitoring and controlling tubes by information coming from the object and/or discharge
Applicants
  • 東京エレクトロン株式会社 TOKYO ELECTRON LIMITED [JP]/[JP] (AllExceptUS)
  • 高木 俊夫 TAKAGI, Toshio [JP]/[JP] (UsOnly)
  • 金子 裕是 KANEKO, Hiroshi [JP]/[JP] (UsOnly)
  • 岩田 輝夫 IWATA, Teruo [JP]/[JP] (UsOnly)
  • 竹山 環 TAKEYAMA, Tamaki [JP]/[JP] (UsOnly)
  • 柿本 明修 KAKIMOTO, Akinobu [JP]/[JP] (UsOnly)
Inventors
  • 高木 俊夫 TAKAGI, Toshio
  • 金子 裕是 KANEKO, Hiroshi
  • 岩田 輝夫 IWATA, Teruo
  • 竹山 環 TAKEYAMA, Tamaki
  • 柿本 明修 KAKIMOTO, Akinobu
Agents
  • 伊東 忠彦 ITOH, Tadahiko
Priority Data
2005-06777710.03.2005JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) METHOD OF SUBSTRATE TREATMENT, RECORDING MEDIUM AND SUBSTRATE TREATING APPARATUS
(FR) PROCEDE DE TRAITEMENT DE SUBSTRAT, SUPPORT D’ENREGISTREMENT ET APPAREIL DE TRAITEMENT DE SUBSTRAT
(JA) 基板処理方法、記録媒体および基板処理装置
Abstract
(EN)
A method of substrate treatment by means of a substrate treating apparatus holding a treatment object substrate and including a treatment vessel having thereinside a first space wherein a first treating gas or second treating gas is fed on the treatment object substrate and a second space defined around the first space and communicating with the first space; first evacuation means for evacuating the first space; and second evacuation means for evacuating the second space, which method is characterized by including the first step of feeding the first treating gas to the first space; the second step of discharging the first treating gas from the first space; the third step of feeding the second treating gas to the first space; and the fourth step of discharging the second treating gas from the first space, while the pressure of the second space is controlled by a pressure regulation gas fed into the second space.
(FR)
L’invention concerne un procédé de traitement de substrat qui utilise un appareil de traitement de substrat contenant un substrat objet à traiter et pourvu d’une enceinte de traitement comprenant un premier espace, dans lequel un premier ou un second gaz de traitement est acheminé vers le substrat objet à traiter, et un second espace défini autour du premier espace et communicant avec le premier espace ; un premier dispositif d’évacuation pour évacuer le premier espace ; et un second dispositif d’évacuation pour évacuer le second espace. Ce procédé se caractérise en ce qu’il comprend : une première étape consistant à introduire le premier gaz de traitement dans le premier espace de traitement ; une deuxième étape consistant à évacuer le premier gaz de traitement du premier espace ; une troisième étape consistant à introduire le second gaz de traitement dans le premier espace ; et une quatrième étape consistant à évacuer le second gaz de traitement du premier espace, tandis que la pression du second espace est contrôlée par un gaz régulant la pression qui est introduit dans le second espace.
(JA)
 被処理基板が保持され、当該被処理基板上に、第1の処理ガスまたは第2の処理ガスが供給される第1の空間と、当該第1の空間の周囲に画成され、当該第1の空間と連通する第2の空間とを内部に有する処理容器と、前記第1の空間を排気する第1の排気手段と、前記第2の空間を排気する第2の排気手段と、を有する基板処理装置による基板処理方法であって、前記第1の空間に前記第1の処理ガスを供給する第1の工程と、当該第1の処理ガスを前記第1の空間より排出する第2の工程と、前記第1の空間に前記第2の処理ガスを供給する第3の工程と、当該第2の処理ガスを前記第1の空間から排出する第4の工程と、を有し、前記第2の空間の圧力が、当該第2の空間に供給される圧力調整ガスによって調整されることを特徴とする基板処理方法。
Also published as
EP6714069
Latest bibliographic data on file with the International Bureau