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1. WO2006095425 - NONVOLATILE SEMICONDUCTOR STORAGE AND METHOD FOR MANUFACTURING SAME

Publication Number WO/2006/095425
Publication Date 14.09.2006
International Application No. PCT/JP2005/004194
International Filing Date 10.03.2005
IPC
H01L 27/105 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04the substrate being a semiconductor body
10including a plurality of individual components in a repetitive configuration
105including field-effect components
H01L 21/822 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
78with subsequent division of the substrate into plural individual devices
82to produce devices, e.g. integrated circuits, each consisting of a plurality of components
822the substrate being a semiconductor, using silicon technology
H01L 27/04 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04the substrate being a semiconductor body
CPC
H01L 27/11502
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04the substrate being a semiconductor body
10including a plurality of individual components in a repetitive configuration
105including field-effect components
112Read-only memory structures ; [ROM] and multistep manufacturing processes therefor
115Electrically programmable read-only memories; Multistep manufacturing processes therefor
11502with ferroelectric memory capacitors
H01L 27/11507
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04the substrate being a semiconductor body
10including a plurality of individual components in a repetitive configuration
105including field-effect components
112Read-only memory structures ; [ROM] and multistep manufacturing processes therefor
115Electrically programmable read-only memories; Multistep manufacturing processes therefor
11502with ferroelectric memory capacitors
11507characterised by the memory core region
H01L 28/55
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
28Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
40Capacitors
55with a dielectric comprising a perovskite structure material
Applicants
  • 富士通株式会社 FUJITSU LIMITED [JP]/[JP] (AllExceptUS)
  • 佐藤 良夫 SATOH, Yoshio [JP]/[JP] (UsOnly)
  • 有本 由弘 ARIMOTO, Yoshihiro [JP]/[JP] (UsOnly)
  • 佐脇 一平 SAWAKI, Ippei [JP]/[JP] (UsOnly)
  • 宮下 勉 MIYASHITA, Tsutomu [JP]/[JP] (UsOnly)
  • 上田 政則 UEDA, Masanori [JP]/[JP] (UsOnly)
  • 松田 隆志 MATSUDA, Takashi [JP]/[JP] (UsOnly)
Inventors
  • 佐藤 良夫 SATOH, Yoshio
  • 有本 由弘 ARIMOTO, Yoshihiro
  • 佐脇 一平 SAWAKI, Ippei
  • 宮下 勉 MIYASHITA, Tsutomu
  • 上田 政則 UEDA, Masanori
  • 松田 隆志 MATSUDA, Takashi
Agents
  • 北野 好人 KITANO, Yoshihito
Priority Data
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) NONVOLATILE SEMICONDUCTOR STORAGE AND METHOD FOR MANUFACTURING SAME
(FR) DISPOSITIF DE STOCKAGE SEMI-CONDUCTEUR NON VOLATIL ET PROCÉDÉ DE FABRICATION IDOINE
(JA) 不揮発性半導体記憶装置及びその製造方法
Abstract
(EN)
Disclosed is a nonvolatile semiconductor storage comprising a capacitor (32) having a first electrode (26) formed on a substrate (10), a single crystal ferroelectric layer (28) formed on the first electrode, and a second electrode (30) formed on the ferroelectric layer. Since an extremely stable single crystal ferroelectric material is used as the material for the ferroelectric layer (28) of the capacitor (32), the capacitor (32) hardly deteriorates even when polarization reversals are repeated. Consequently, there can be obtained a nonvolatile semiconductor storage having a very long life. In addition, an extremely high remanent polarization (Pr) can be obtained since a single crystal ferroelectric material is used as the material for the ferroelectric layer (28) of the capacitor (32). Consequently, a sufficiently large signal can be obtained even when the capacitor (32) is miniaturized, thereby enabling to obtain a nonvolatile semiconductor storage with a high degree of integration.
(FR)
L’invention concerne un dispositif de stockage semi-conducteur non volatil comprenant un condensateur (32) ayant une première électrode (26) formée sur un substrat (10), une couche ferroélectrique monocristalline (28) formée sur la première électrode, et une seconde électrode (30) formée sur la couche ferroélectrique. Comme on utilise un matériau ferroélectrique monocristallin extrêmement stable comme matériau pour la couche ferroélectrique (28) du condensateur (32), le condensateur (32) se détériore à peine même si les inversions de polarisation sont répétées. En conséquence, on peut obtenir un dispositif de stockage semi-conducteur non volatil ayant une très longue durée de vie. En outre, on peut obtenir une polarisation rémanente extrêmement élevée (Pr) dans la mesure où l’on utilise un matériau ferroélectrique monocristallin comme matériau pour la couche ferroélectrique (28) du condensateur (32). En conséquence, on peut obtenir un signal suffisamment grand même si le condensateur (32) est miniaturisé, permettant ainsi de produire un dispositif de stockage semi-conducteur non volatil avec un degré élevé d’intégration.
(JA)
 基板10上に形成された第1の電極26と;第1の電極上に形成された単結晶の強誘電体層28と;強誘電体層上に形成された第2の電極30とを有するキャパシタ32を有している。キャパシタ32の強誘電体層28の材料として、極めて安定な材料である単結晶の強誘電体が用いられているため、分極反転を繰り返し行っても殆ど劣化しない。このため、極めて寿命の長い不揮発性半導体記憶装置を提供することができる。また、キャパシタ32の強誘電体層28の材料として単結晶の強誘電体が用いられているため、極めて高い残留分極値Prを得ることができる。このため、キャパシタ32を微細化した場合であっても、十分に大きい信号を得ることが可能である。このため、集積度の高い不揮発性半導体記憶装置を提供することができる。
Also published as
EP5720465
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