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1. WO2006095112 - NANOMETRIC MOS TRANSISTOR WITH MAXIMIZED RATIO BETWEEN ON-STATE CURRENT AND OFF-STATE CURRENT

Available information on National Phase entries(more information)
OfficeEntry DateNational NumberNational Status
Japan 07.09.20072008500244
European Patent Office 21.09.20072006726224Published: 28.11.2007
Withdrawn: 17.06.2011
Russian FederationWithdrawn: 08.10.2007