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1. WO2006093800 - APPARATUS AND METHOD FOR ENHANCED CRITICAL DIMENSION SCATTEROMETRY

Publication Number WO/2006/093800
Publication Date 08.09.2006
International Application No. PCT/US2006/006449
International Filing Date 24.02.2006
IPC
G01B 11/06 2006.01
GPHYSICS
01MEASURING; TESTING
BMEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
11Measuring arrangements characterised by the use of optical means
02for measuring length, width, or thickness
06for measuring thickness
G01N 21/47 2006.01
GPHYSICS
01MEASURING; TESTING
NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
21Investigating or analysing materials by the use of optical means, i.e. using infra-red, visible or ultra-violet light
17Systems in which incident light is modified in accordance with the properties of the material investigated
47Scattering, i.e. diffuse reflection
CPC
G01B 11/0616
GPHYSICS
01MEASURING; TESTING
BMEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
11Measuring arrangements characterised by the use of optical means
02for measuring length, width or thickness
06for measuring thickness, e.g. of sheet material
0616of coating
G01B 11/24
GPHYSICS
01MEASURING; TESTING
BMEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
11Measuring arrangements characterised by the use of optical means
24for measuring contours or curvatures
G01B 11/30
GPHYSICS
01MEASURING; TESTING
BMEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
11Measuring arrangements characterised by the use of optical means
30for measuring roughness or irregularity of surfaces
G01N 2021/4792
GPHYSICS
01MEASURING; TESTING
NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
21Investigating or analysing materials by the use of optical means, i.e. using infra-red, visible or ultra-violet light
17Systems in which incident light is modified in accordance with the properties of the material investigated
47Scattering, i.e. diffuse reflection
4792Polarisation of scatter light
G01N 21/21
GPHYSICS
01MEASURING; TESTING
NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
21Investigating or analysing materials by the use of optical means, i.e. using infra-red, visible or ultra-violet light
17Systems in which incident light is modified in accordance with the properties of the material investigated
21Polarisation-affecting properties
G01N 21/274
GPHYSICS
01MEASURING; TESTING
NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
21Investigating or analysing materials by the use of optical means, i.e. using infra-red, visible or ultra-violet light
17Systems in which incident light is modified in accordance with the properties of the material investigated
25Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
27using photo-electric detection
274Calibration, base line adjustment, drift correction
Applicants
  • NANOMETRICS INCORPORATED [US]/[US] (AllExceptUS)
  • RAYMOND, Chris [US]/[US] (UsOnly)
  • HUMMEL, Steve [US]/[US] (UsOnly)
Inventors
  • RAYMOND, Chris
  • HUMMEL, Steve
Agents
  • HALBERT, Michael, J.
Priority Data
60/656,71225.02.2005US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) APPARATUS AND METHOD FOR ENHANCED CRITICAL DIMENSION SCATTEROMETRY
(FR) DISPOSITIFS ET PROCEDES DE DIFFUSIOMETRIE PERMETTANT UNE EVALUATION AMELIOREE DES DIMENSIONS CRITIQUES
Abstract
(EN)
Scatterometers and methods of using scatterometry to determine several parameters of periodic microstructures, pseudo-periodic structures, and other very small structures having features sizes as small as 100 nm or less. Several specific embodiments of the present invention are particularly useful in the semiconductor industry to determine the width, depth, line edge roughness, wall angle, film thickness, and many other parameters of the features formed in microprocessors, memory devices, and other semiconductor devices. The scatterometers and methods of the invention, however, are not limited t semiconductor applications and can be applied equally well in other applications. The scatterometer contains a positioning system and an auto-focus system.
(FR)
L'invention concerne des diffusiomètres, et des procédés d'utilisation de la diffusiométrie permettant de déterminer différents paramètres de microstructures périodiques, de structures pseudo-périodiques, et d'autres structures de très petites dimensions comportant des éléments d'une taille égale ou inférieure à 100 nm. Différents modes de réalisation spécifiques de cette invention sont particulièrement utiles dans l'industrie des semi-conducteurs, pour déterminer la largeur, la profondeur, la rugosité des bords de ligne, les angles des parois, les épaisseurs des couches, ainsi qu'un grand nombre d'autres paramètres des éléments formés dans les microprocesseurs, les dispositifs à mémoire, et d'autres dispositifs à semi-conducteur. Les diffusiomètres et les procédés décrits ne sont toutefois pas limités aux applications de semi-conducteurs, mais conviennent également pour d'autres applications.
Also published as
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