Processing

Please wait...

PATENTSCOPE will be unavailable a few hours for maintenance reason on Saturday 31.10.2020 at 7:00 AM CET
Settings

Settings

Goto Application

1. WO2006093399 - HOLOGRAPHIC DEVICE AND METHOD FOR DETERMINATION OF PHOTOELECTRIC PARAMETERS OF A SEMICONDUCTOR

Publication Number WO/2006/093399
Publication Date 08.09.2006
International Application No. PCT/LT2006/000001
International Filing Date 13.01.2006
IPC
G01R 31/26 2006.01
GPHYSICS
01MEASURING; TESTING
RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
31Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
26Testing of individual semiconductor devices
G01N 21/88 2006.01
GPHYSICS
01MEASURING; TESTING
NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
21Investigating or analysing materials by the use of optical means, i.e. using infra-red, visible or ultra-violet light
84Systems specially adapted for particular applications
88Investigating the presence of flaws, defects or contamination
G03H 1/00 2006.01
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
HHOLOGRAPHIC PROCESSES OR APPARATUS
1Holographic processes or apparatus using light, infra-red, or ultra-violet waves for obtaining holograms or for obtaining an image from them; Details peculiar thereto
CPC
G03H 1/0005
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
HHOLOGRAPHIC PROCESSES OR APPARATUS
1Holographic processes or apparatus using light, infra-red or ultra-violet waves for obtaining holograms or for obtaining an image from them; Details peculiar thereto
0005Adaptation of holography to specific applications
G03H 2001/0033
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
HHOLOGRAPHIC PROCESSES OR APPARATUS
1Holographic processes or apparatus using light, infra-red or ultra-violet waves for obtaining holograms or for obtaining an image from them; Details peculiar thereto
0005Adaptation of holography to specific applications
0033in hologrammetry for measuring or analysing
G03H 2001/0268
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
HHOLOGRAPHIC PROCESSES OR APPARATUS
1Holographic processes or apparatus using light, infra-red or ultra-violet waves for obtaining holograms or for obtaining an image from them; Details peculiar thereto
02Details ; of features involved during the holographic process; Replication of holograms without interference recording
026Recording materials or recording processes
0268Inorganic recording material, e.g. photorefractive crystal [PRC]
G03H 2222/33
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
HHOLOGRAPHIC PROCESSES OR APPARATUS
2222Light sources or light beam properties
33Pulsed light beam
G03H 2223/26
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
HHOLOGRAPHIC PROCESSES OR APPARATUS
2223Optical components
26Means providing optical delay, e.g. for path length matching
H01L 22/14
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
22Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
10Measuring as part of the manufacturing process
14for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
Applicants
  • JARASIUNAS, Kestutis [LT]/[LT]
  • SUDZIUS, Markas [LT]/[LT]
Inventors
  • JARASIUNAS, Kestutis
  • SUDZIUS, Markas
Priority Data
2005 02001.03.2005LT
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) HOLOGRAPHIC DEVICE AND METHOD FOR DETERMINATION OF PHOTOELECTRIC PARAMETERS OF A SEMICONDUCTOR
(FR) DISPOSITIF HOLOGRAPHIQUE ET PROCEDE DE DETERMINATION DE PARAMETRES PHOTOELECTRIQUES D’UN SEMICONDUCTEUR
Abstract
(EN)
The invention is intended for measurement of a semiconductor photoelectric properties by optical means and, thus, can be used for contactless characterization of semiconductor crystals, structures, or evaluation of their fabrication technology. A holographic method for determination of photoelectric parameters of a semiconductor uses for optical excitation two beams with identical wave fronts that are created by an optical mask, monitors the light-induced spatially-modulated structure within the investigated semiconductor by optical probe pulse, measures the diffraction characteristics of the probe beam which diffracts on the structure, and determines the photoelectric parameters of a semiconductor from the diffraction characteristics. A holographic device for determination of photoelectric parameters of a semiconductor employs a diffraction grating and beam-aligning elements positioned in the optical excitation channels, variable delay line for the probe beam, and set of detectors to monitor characteristics of probe beam diffraction efficiency on the spatially modulated structure.
(FR)
L’invention concerne la mesure de paramètres photoélectriques d’un semiconducteur par des moyens optiques permettant ainsi la caractérisation sans contact de cristaux semiconducteurs, de structures, ou l’évaluation de leur technologie de fabrication. Le procédé holographique de détermination de paramètres photoélectriques d’un semiconducteur utilise deux faisceaux d’excitation optiques comportant deux fronts d’onde identiques créés par un masque optique, contrôle la structure à modulation spatiale produite par la lumière au sein du semiconducteur à l’étude à l’aide d’une impulsion sonde optique, mesure les caractéristiques de diffraction du faisceau sonde se diffractant sur la structure, et détermine les paramètres photoélectriques d’un semiconducteur à partir des caractéristiques de diffraction. L’invention concerne également un dispositif holographique de détermination de paramètres photoélectriques d’un semiconducteur utilisant des éléments de réseau de diffraction et d’alignement de faisceau placés dans des canaux d’excitation optique, une ligne à retard variable pour le faisceau sonde et un groupe de détecteurs pour contrôler les caractéristiques de l’efficacité de diffraction du faisceau sonde sur la structure à modulation spatiale.
Also published as
EP6701106
Latest bibliographic data on file with the International Bureau