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1. WO2006093029 - THIN FILM TRANSISTOR PANEL

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[ EN ]

CLAIMS
1. A thin film transistor panel,
comprising:
a transparent substrate (1) ;
scanning lines (2) made of a transparent
electroconductive material, formed on the transparent substrate (1) ;
data lines (3) formed on the transparent substrate to be perpendicular to the scanning lines (2) ;
thin film transistors (5) , each provided with a transparent gate electrode (11) connected to one of the scanning lines (2), a transparent drain electrode (16) connected to one of the data lines (3), a transparent source electrode (15) and a transparent semiconductor thin film (13); and
transparent pixel electrodes (4) connected to the thin film transistors (5) ,
wherein each of the pixel electrodes (4) is formed to cover each of the thin film transistors (5) .

2. The thin film transistor panel according to Claim 1, wherein each of the thin film
transistors (5) is provided with the
semiconductor thin film (13) made of a metal oxide, the drain electrode (16) made of a metal oxide including impurities, the source electrode (15) and the gate electrode (11) .

3. The thin film transistor panel according to Claim 2, wherein the drain electrode (16) and the source electrode (15) are formed on the semiconductor thin film (13).

4. The thin film transistor panel according to Claim 1, wherein each of the thin film
transistors (5) is provided with the
semiconductor thin film (13) made of a metal oxide, the gate electrode (11) made of a metal oxide including impurities, the drain electrode

(16) made of a transparent electroconductive material, and the source electrode (15) .

5. The thin film transistor panel according to Claim 4, wherein the drain electrode (16) and the source electrode (15) are formed below the semiconductor thin film (13).

6. The thin film transistor panel according to Claim 4, wherein the gate electrode (11) of each of the thin film transistors (5) is formed with a metal oxide including p type impurities.

7. The thin film transistor panel according to Claim 4, wherein the scanning line (2)
connected to the gate electrode is formed with the same material as that of the gate electrode (.11), and the data line (3) connected to the drain electrode is formed with the same material as that of the drain electrode.

8. The thin film transistor panel according to Claim 1, wherein each of the pixel electrodes (4) is formed with a transparent
electroconductive material, and is connected to the source electrode (15) of each of the thin film transistors (5) .

9. The thin film transistor panel according to Claim 1, further comprising light blocking films (6) between the pixel electrodes (4), wherein each of the light blocking films (6) has a width wider than a gap between the pixel
electrodes ( 4 ) .

10. The thin film transistor panel
according to Claim 1, wherein an auxiliary
capacity electrode (6) is provided between the pixel electrodes (4) and the data lines (3) through an insulation film (17, 18), and overlaps with an entire edge portion of the pixel electrodes (4) in a plan view.

11. The thin film transistor panel
according to Claim 10, wherein the auxiliary capacity electrode (6) is formed with a grid-like light blocking metal to cover the scanning lines (2) and the data lines (3).

12. The thin film transistor panel
according to Claim 1, further comprising light emitting portions, each provided with an anode electrode (22) , an organic EL layer (25) and a cathode electrode (26), wherein each of the thin film transistors (5) is provided with the
semiconductor thin film (13) made of a metal oxide, the drain electrode (16) made of a metal oxide including impurities, the source electrode (15) and the gate electrode (11) .

13. The thin film transistor panel
according to Claim 12, wherein an extended
portion of the source electrode (15) of each of the thin film transistors (5) is formed as the anode electrode (22) of the light emitting
portion.

14. The thin film transistor panel according to Claim 1, further comprising light emitting portions, each provided with an anode electrode (22), an organic EL layer (25) and a cathode electrode (26), which is on each of the thin film transistors (5) through an insulating layer (21) .

15. The thin film transistor panel
according to Claim 14, wherein the insulating layer (21) is a planarizing film.

16. The thin film transistor panel
according to Claim 14, wherein the anode
electrode (22), the organic EL layer (25) and the cathode electrode (26) are laminated in the order from the side of the insulating layer (21) .

17. The thin film transistor panel according to Claim 16, wherein the cathode electrode (26) is a reflecting electrode.