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Machine translation
1. (WO2006091781) APPARATUS AND METHOD FOR ENHANCED CRITICAL DIMENSION SCATTEROMETRY
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2006/091781    International Application No.:    PCT/US2006/006536
Publication Date: 31.08.2006 International Filing Date: 24.02.2006
IPC:
G01B 11/06 (2006.01), G01N 21/47 (2006.01)
Applicants: ACCENT OPTICAL TECHNOLOGIES, INC. [US/US]; 131 Nw Hawthorne, Suite 207, Bend, Oregon 97701 (US) (For All Designated States Except US).
RAYMOND, Chris [US/US]; (US) (For US Only).
HUMMEL, Steve [US/US]; (US) (For US Only).
LIU, Sean [GB/GB]; (GB) (For US Only)
Inventors: RAYMOND, Chris; (US).
HUMMEL, Steve; (US).
LIU, Sean; (GB)
Agent: PARKER, Paul; PERKINS COIE LLP, P.o. Box 1247, Seattle, Washington 98111-1247 (US)
Priority Data:
60/656,712 25.02.2005 US
Title (EN) APPARATUS AND METHOD FOR ENHANCED CRITICAL DIMENSION SCATTEROMETRY
(FR) APPAREIL ET PROCEDE DE DIFFUSOMETRIE A DIMENSION CRITIQUE ACCRUE
Abstract: front page image
(EN)Scatterometers and methods of using scatterometry to determine several parameters of periodic microstructures, pseudo-periodic structures, and other very small structures having features sizes as small as 100 nm or less. Several specific embodiments of the present invention are particularly useful in the semiconductor industry to determine the width, depth, line edge roughness, wall angle, film thickness, and many other parameters of the features formed in microprocessors, memory devices, and other semiconductor devices. The scatterometers and methods of the invention, however, are not limited to semiconductor applications and can be applied equally well in other applications. Scatterometer contains a CMOS detector without a flat, parallel cover between focal lens and CMOS chip.
(FR)L'invention porte sur des diffusomètres et leurs procédés d'utilisation permettant de déterminer différents paramètres de microstructures périodiques, de structures pseudo-périodiques ou d'autres structures dont la taille est inférieure à 100 nm ou moins. Plusieurs variantes spécifiques de l'invention s'avèrent particulièrement utiles dans l'industrie des semi-conducteurs pour déterminer la largeur, la profondeur la rugosité des contours, l'angle de la paroi, l'épaisseur d'une couche, etc. de microprocesseurs, mémoires et autres semi-conducteurs. Les diffusomètres et les procédés associés de l'invention ne se limitent pas aux applications relatives aux semi-conducteurs, mais touchent également d'autres domaines. Lesdits diffusomètres contiennent un détecteur CMOS ne présentant pas de couverture plate et parallèle entre la lentille focale et la puce du CMOS
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, LY, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RU, SC, SD, SE, SG, SK, SL, SM, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, YU, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, LV, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)