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1. (WO2006091480) SNSE-BASED LIMITED REPROGRAMMABLE CELL
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2006/091480    International Application No.:    PCT/US2006/005618
Publication Date: 31.08.2006 International Filing Date: 17.02.2006
IPC:
H01L 45/00 (2006.01), G11C 16/02 (2006.01)
Applicants: MICRON TECHNOLOGY, INC. [US/US]; 8000 S. Federal Way, Boise, Idaho 83707-0006 (US) (For All Designated States Except US).
CAMPBELL, Kristy, A. [US/US]; (US) (For US Only)
Inventors: CAMPBELL, Kristy, A.; (US)
Agent: D'AMICO, Thomas, J.; Dickstein Shapiro Morin & Oshinsky LLP, 2101 L Street Nw, Washington, DC 20037-1526 (US)
Priority Data:
11/062,436 23.02.2005 US
Title (EN) SNSE-BASED LIMITED REPROGRAMMABLE CELL
(FR) CELLULE REPROGRAMMABLE LIMITÉE À BASE SNSE
Abstract: front page image
(EN)Methods and apparatus for providing a memory device that can be programmed a limited number of times. According to exemplary embodiments, a memory device and its method of formation provide a first electrode, a second electrode and a layer of a chalcogenide or germanium comprising material between the first electrode and the second electrode. The memory device further includes a tin-chalcogenide layer between the chalcogenide or germanium comprising material layer and the second electrode.
(FR)L’invention concerne des procédés et des appareils permettant d’obtenir un dispositif mémoire que l’on peut programmer un nombre de fois limité. Selon des modes de réalisation exemplaires, un dispositif mémoire comprend une première électrode, une seconde électrode et une couche d’un matériau comprenant du chalcogénure ou du germanium disposée entre la première électrode et la seconde électrode. Le dispositif mémoire comporte en outre une couche d’étain/chalcogénure entre la couche de matériau comprenant du chalcogénure ou du germanium et la seconde électrode.
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, LY, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RU, SC, SD, SE, SG, SK, SL, SM, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, YU, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, LV, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)