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Machine translation
1. (WO2006091290) METHOD OF FORMING NANOCLUSTERS
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2006/091290    International Application No.:    PCT/US2006/001396
Publication Date: 31.08.2006 International Filing Date: 17.01.2006
IPC:
H01L 21/336 (2006.01)
Applicants: FREESCALE SEMICONDUCTOR, INC. [US/US]; 6501 William Cannon Drive West, Austin, TX 78735 (US) (For All Designated States Except US).
MERCHANT, Tushar, P. [IN/US]; (US) (For US Only).
MURALIDHAR, Ramachandran [US/US]; (US) (For US Only).
RAO, Rajesh, A. [IN/US]; (US) (For US Only).
STOKER, Matthew, W. [US/US]; (US) (For US Only).
STRAUB, Sherry, G. [US/US]; (US) (For US Only)
Inventors: MERCHANT, Tushar, P.; (US).
MURALIDHAR, Ramachandran; (US).
RAO, Rajesh, A.; (US).
STOKER, Matthew, W.; (US).
STRAUB, Sherry, G.; (US)
Agent: KING, Robert, L.; 7700 W. Parmer Lane, MD:PL02, Austin, TX 78729 (US)
Priority Data:
11/065,519 24.02.2005 US
Title (EN) METHOD OF FORMING NANOCLUSTERS
(FR) PROCEDE DE FORMATION DE NANOAGREGATS
Abstract: front page image
(EN)A method for forming nanoclusters includes providing a semiconductor substrate (32); forming a dielectric layer (34) over the semiconductor substrate, exposing the semiconductor substrate to a first flux of atoms (52) to form first nuclei (42) on the dielectric layer, exposing the first nuclei to a first inert atmosphere (44) after exposing the semiconductor substrate to the first flux, and exposing the semiconductor substrate to a second flux of atoms (52) to form second nuclei (54) after exposing the first nuclei to an inert atmosphere.
(FR)L'invention porte sur un procédé de formation de nanoagrégats consistant à fournir un substrat semi-conducteur (32) ; à former une couche diélectrique (34) sur le substrat semi-conducteur, à exposer le substrat semi-conducteur à un premier flux d'atomes (52) afin de former un premier noyau (42) sur la couche diélectrique, à exposer le premier noyau à une première atmosphère inerte (44) après avoir exposé le substrat semi-conducteur au premier flux, et à exposer le substrat semi-conducteur à un second flux d'atomes (52) afin de former un second noyau (54) après avoir exposé le premier noyau à une atmosphère inerte.
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, LY, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RU, SC, SD, SE, SG, SK, SL, SM, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, YU, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, LV, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)