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Machine translation
1. (WO2006091280) NON-VOLATILE ELECTRICALLY ALTERABLE MEMORY CELL FOR STORING MULTIPLE DATA AND MANUFACTURING THEREOF
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2006/091280    International Application No.:    PCT/US2006/000969
Publication Date: 31.08.2006 International Filing Date: 12.01.2006
IPC:
H01L 29/76 (2006.01)
Applicants: YU, Andy [US/US]; (US).
GO, Ying [US/US]; (US)
Inventors: GO, Ying; (US)
Agent: FIELDS, Carlton; 1201 W. Peachtree Street, Suite 3000, Atlanta, Georgia 30309 (US)
Priority Data:
11/036,911 14.01.2005 US
Title (EN) NON-VOLATILE ELECTRICALLY ALTERABLE MEMORY CELL FOR STORING MULTIPLE DATA AND MANUFACTURING THEREOF
(FR) CELLULE DE MEMOIRE MODIFIABLE ELECTRIQUEMENT NON VOLATILE POUR STOCKAGE DE MULTIPLES DONNEES ET FABRICATION DE CELLE-CI
Abstract: front page image
(EN)A memory cell that includes two control gates disposed laterally between two floating gates where each floating gate is capable of holding data. The memory cell is formed by placing a first polysilicon on a substrate of semiconductor material, on which a well is placed. The control gates are preferably formed by a Damascene process, in which a first polysilicon is removed after forming two floating gates, and a second polysilicon is placed between these two floating gates. An anisotropic etching is later done on the second polysilicon to form two control gates.
(FR)Cette invention concerne une cellule de mémoire qui comprend deux grilles de commande disposées latéralement entre deux grilles flottantes, chaque grille flottante étant capable de contenir des données. La cellule de mémoire est formée par dépôt d'un premier polysilicium sur un substrat de matériau semi-conducteur sur lequel un puits est placé. Les grilles de commande sont de préférence formées par un processus de damasquinage dans lequel un premier polysilicium est retiré après formation de deux grilles flottantes et un second polysilicium est déposé entre ces deux grilles flottantes. Une gravure anisotropique est ensuite réalisée sur le second polysilicium afin que deux grilles de commande soient formées.
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, LY, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RU, SC, SD, SE, SG, SK, SL, SM, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, YU, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, LV, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)