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Machine translation
1. (WO2006090841) AlGaAs LIGHT EMITTING DIODE HAVING DOUBLE HETERO JUNCTION AND METHOD FOR MANUFACTURING SAME
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2006/090841    International Application No.:    PCT/JP2006/303444
Publication Date: 31.08.2006 International Filing Date: 24.02.2006
IPC:
H01L 21/208 (2006.01), H01L 33/30 (2010.01)
Applicants: DOWA ELECTRONICS MATERIALS CO., LTD. [JP/JP]; 14-1, Sotokanda 4-chome, Chiyoda-ku, Tokyo, 1010021 (JP) (For All Designated States Except US).
MURASE, Kenichi [JP/JP]; (JP) (For US Only).
ARAKI, Takashi [JP/JP]; (JP) (For US Only)
Inventors: MURASE, Kenichi; (JP).
ARAKI, Takashi; (JP)
Agent: ANIYA, Setuo; 21 Towa Bldg. 3F 4-6-1, Iidabashi Chiyoda-ku Tokyo 102-0072 (JP)
Priority Data:
2005-050761 25.02.2005 JP
Title (EN) AlGaAs LIGHT EMITTING DIODE HAVING DOUBLE HETERO JUNCTION AND METHOD FOR MANUFACTURING SAME
(FR) DIODE ELECTROLUMINESCENTE AIGaAs DISPOSANT D'UNE DOUBLE JONCTION ET SON PROCEDE DE FABRICATION
(JA) ダブルヘテロ接合を有するAlGaAs系発光ダイオードおよびその製造方法
Abstract: front page image
(EN)A high-speed response AlGaAs light emitting diode which has an emission peak wavelength of 880nm or more and is provided with double hetero junction. The LED is provided with at least three layers of a P-type clad layer (1) composed of a P-type AlGaAs compound, a P-type light emitting layer (2) composed of a P-type AlGaAs compound, and an N-type clad layer (3) composed of an N-type AlGaAs compound. The light emitting layer (2) is added with Si and Ge as dopant.
(FR)La présente invention concerne une diode électroluminescente AIGaAs à réponse très rapide qui possède une longueur d'onde de crête d'émission de 880 nm ou plus et qui est munie d’une double jonction. La DEL est munie d'au moins trois couches, à savoir une couche de revêtement de type P (1) constituée d'un composé AIGaAs de type P, une couche électroluminescente de type P (2) constituée d'un composé AIGaAs de type P ainsi qu'une couche de revêtement de type N (3) constituée d'un composé AIGaAs de type N. La couche électroluminescente (2) est complétée par du Si et du Ge agissant comme dopants.
(JA) 発光のピーク波長が880nm以上で応答性が速い、ダブルヘテロ接合を有するAlG aAs系発光ダイオードを提供する。  P型のAlGaAs化合物からなるP型クラッド層1と、P型のAlGaAs化合物か らなるP型の発光層2と、N型のAlGaAs化合物からなるN型クラッド層3との少な くとも3層を有するLEDにおいて、前記発光層2にドーパントとしてSiとGeとを添加する。
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, LY, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RU, SC, SD, SE, SG, SK, SL, SM, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, YU, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, LV, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)