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1. (WO2006090645) SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SUBSTRATE PROCESSING APPARATUS
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2006/090645    International Application No.:    PCT/JP2006/302838
Publication Date: 31.08.2006 International Filing Date: 17.02.2006
IPC:
H01L 21/316 (2006.01)
Applicants: HITACHI KOKUSAI ELECTRIC INC. [JP/JP]; 14-1, Soto-Kanda 4-chome, Chiyoda-ku Tokyo 1010021 (JP) (For All Designated States Except US).
KOOKJE (KOKUSAI) ELECTRIC KOREA CO., LTD. [KR/KR]; KOOKJE (KOKUSAI) ELECTRIC KOREA CO., LTD. 4-2 CHAAM-DONG, CHEONAN-SI, CHUNG CHEONG NAMDO (KR) (For All Designated States Except US).
KIM, Yong Weon [KR/KR]; (KR) (For US Only).
HORII, Sadayoshi [JP/JP]; (JP) (For US Only)
Inventors: KIM, Yong Weon; (KR).
HORII, Sadayoshi; (JP)
Agent: YUI, Tohru; 21 TOWA BLDG. 3F 4-6-1, Iidabashi Chiyoda-ku Tokyo 1020072 (JP)
Priority Data:
2005-049571 24.02.2005 JP
Title (EN) SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SUBSTRATE PROCESSING APPARATUS
(FR) PROCEDE DE FABRICATION D'UN DISPOSITIF SEMI-CONDUCTEUR ET APPAREIL DE TRAITEMENT DE SUBSTRAT
(JA) 半導体装置の製造方法および基板処理装置
Abstract: front page image
(EN)A film including a highly reliable metal atom is formed on a substrate without forming an oxide film on an interface between the substrate and the film. A method is provided with a step of forming a film including a first metal atom on the substrate, and a step of forming a film including a second metal atom on the substrate whereupon the film including the first metal atom is formed. In the step of forming the film including the second metal atom, at least a part of the film, which is formed on the substrate and includes the first metal atom, is oxidized to form an oxide, and the oxide is substantially eliminated.
(FR)L'invention concerne la formation d'un film comprenant un atome métallique très fiable sur un substrat, sans formation d'un film d'oxyde sur une interface entre le substrat et le film. L'invention concerne également un procédé comprenant une étape consistant à former un film comprenant un premier atome métallique sur le substrat et une étape consistant à former un film comprenant un second atome métallique sur le substrat sur lequel le film comprenant le premier atome métallique est formé. Dans l'étape consistant à former le film comprenant le second atome métallique, au moins une partie du film, formée sur le substrat et comprenant le premier atome métallique, est oxydé, de manière à former un oxyde qui est sensiblement éliminé.
(JA) 基板との界面に酸化膜が形成されないようにして、基板上に信頼性の高い金属原子を含む膜を形成することを可能とする。  基板上に第1の金属原子を含む膜を形成する工程と、前記第1の金属原子を含む膜を形成した基板に対して、第2の金属原子を含む膜を形成する工程とを有し、前記第2の金属原子を含む膜を形成する工程では、前記基板上に形成した前記第1の金属原子を含む膜の少なくとも一部を酸化させて酸化物を形成し、その酸化物を実質的に消滅させる。
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, LY, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RU, SC, SD, SE, SG, SK, SL, SM, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, YU, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, LV, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)