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Machine translation
1. (WO2006088698) OPTICAL METROLOGY OF A STRUCTURE FORMED ON A SEMICONDUCTOR WAFER USING OPTICAL PULSES
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2006/088698    International Application No.:    PCT/US2006/004291
Publication Date: 24.08.2006 International Filing Date: 06.02.2006
IPC:
G01B 11/02 (2006.01)
Applicants: TOKYO ELECTRON LIMITED [JP/JP]; TBS Broadcast Center, 3-6 Akasaka 5-chome, Minato-ku, Tokyo 107 (JP) (For All Designated States Except US).
BAO, Junwei [US/US]; (US) (For US Only).
BISCHOFF, Joerg [DE/DE]; (DE) (For US Only)
Inventors: BAO, Junwei; (US).
BISCHOFF, Joerg; (DE)
Agent: YIM, Peter; MORRISON & FOERSTER LLP, 425 Market Street, San Francisco, California 94105-2482 (US)
Priority Data:
11/061,330 17.02.2005 US
Title (EN) OPTICAL METROLOGY OF A STRUCTURE FORMED ON A SEMICONDUCTOR WAFER USING OPTICAL PULSES
(FR) METROLOGIE OPTIQUE D'UNE STRUCTURE FORMEE SUR UN SEMI-CONDUCTEUR ETAGE PAR IMPULSIONS OPTIQUES
Abstract: front page image
(EN)A structure formed on a wafer can be examined by directing an incident pulse at the structure, the incident pulse being a sub-picosecond optical pulse. A diffraction pulse resulting from the incident pulse diffracting from the structure is measured. A characteristic of the profile of the structure is then determined based on the measured diffraction pulse.
(FR)Il est possible d'examiner une structure formée sur une tranche en dirigeant une impulsion incidente sur la structure, l'impulsion incidente étant une impulsion optique sous la picoseconde. Une impulsion de diffraction produite par la diffraction de la structure par l'impulsion incidente est mesurée. Une caractéristique du profil de la structure est ensuite déterminée à partir de l'impulsion de diffraction mesurée.
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, LY, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RU, SC, SD, SE, SG, SK, SL, SM, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, YU, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, LV, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)