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Machine translation
1. (WO2006088689) METHOD FOR PATTERNING SUBMICRON PILLARS
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2006/088689    International Application No.:    PCT/US2006/004195
Publication Date: 24.08.2006 International Filing Date: 07.02.2006
IPC:
H01L 21/8234 (2006.01)
Applicants: SANDISK CORPORATION [US/US]; 3230 Scott Blvd., Santa Clara, CA 95054 (US) (For All Designated States Except US).
RAGHURAM, Usha [US/US]; (US) (For US Only).
KONEVECKI, Michael W. [CA/US]; (US) (For US Only)
Inventors: RAGHURAM, Usha; (US).
KONEVECKI, Michael W.; (US)
Agent: SQUYRES, Pamela J.; SanDisk Corporation, 3230 Scott Blvd., Santa Clara, CA 95054 (US)
Priority Data:
11/061,952 17.02.2005 US
Title (EN) METHOD FOR PATTERNING SUBMICRON PILLARS
(FR) PROCEDE DE MODELAGE DE PILIERS DE TAILLE SUBMICRONIQUE
Abstract: front page image
(EN)The present invention provides for a method to pattern and etch very small dimension pillars, for example in a memory array. When dimensions of pillars become very small, the photoresist pillars used to pattern them may not have sufficient mechanical strength to survive the photoresist exposure and development process. Using methods according to the present invention, these photoresist pillars are printed and developed larger than their intended final dimension, such that they have increased mechanical strength, then are shrunk to the desired dimension during a preliminary etch performed before the etch of underlying material begins.
(FR)Procédé de modelage et d'attaque de piliers de très petite dimension, par exemple en réseau mémoire. En pareil cas, les piliers de photorésist utilisés aux fins de modelage n'ont peut-être pas une résistance mécanique suffisante pour résister à l'exposition du photorésist et au processus de développement. Les procédés décrits permettent une impression et un développement à des dimensions supérieures à la dimension finale prévue, ce qui augmente la résistance mécanique, avant rétrécissement à la dimension souhaitée durant une attaque préliminaire exécutée avant le début de l'attaque du matériau sous-jacent.
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, LY, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RU, SC, SD, SE, SG, SK, SL, SM, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, YU, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, LV, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)