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1. (WO2006088036) PROCESS FOR PRODUCING MODIFIED POROUS SILICA FILM, MODIFIED POROUS SILICA FILM OBTAINED BY THE PROCESS, AND SEMICONDUCTOR DEVICE EMPLOYING THE MODIFIED POROUS SILICA FILM

Pub. No.:    WO/2006/088036    International Application No.:    PCT/JP2006/302603
Publication Date: Aug 24, 2006 International Filing Date: Feb 15, 2006
IPC: H01L 21/316
C01B 33/12
H01L 21/768
H01L 23/522
Applicants: ULVAC, INC.
株式会社アルバック
Mitsui Chemicals, Inc.
三井化学株式会社
Tokyo Electron Limited
東京エレクトロン株式会社
FUJII, Nobutoshi
藤井 宣年
KOHMURA, Kazuo
高村 一夫
MIYOSHI, Hidenori
三好 秀典
TANAKA, Hirofumi
田中 博文
OIKE, Shunsuke
大池 俊輔
MURAKAMI, Masami
村上 雅美
KUBOTA, Takeshi
窪田 武司
KURANO, Yoshito
蔵野 義人
Inventors: FUJII, Nobutoshi
藤井 宣年
KOHMURA, Kazuo
高村 一夫
MIYOSHI, Hidenori
三好 秀典
TANAKA, Hirofumi
田中 博文
OIKE, Shunsuke
大池 俊輔
MURAKAMI, Masami
村上 雅美
KUBOTA, Takeshi
窪田 武司
KURANO, Yoshito
蔵野 義人
Title: PROCESS FOR PRODUCING MODIFIED POROUS SILICA FILM, MODIFIED POROUS SILICA FILM OBTAINED BY THE PROCESS, AND SEMICONDUCTOR DEVICE EMPLOYING THE MODIFIED POROUS SILICA FILM
Abstract:
A hydrophobic compound having at least one hydrophobic group (C1-6 alkyl or C6H5) and at least one polymerizable group (hydrogen atom, hydroxy, or halogen atom) is polymerized in a vapor phase in the presence of a raw porous silica film at a reduced pressure (30 kPa or lower) to obtain a modified porous silica film comprising that film and a thin hydrophobic polymer film deposited on the walls of pores of the film. This porous silica film has a low relative permittivity and a low refractive index and is improved in mechanical strength and hydrophobicity. This porous silica film is used to obtain a semiconductor device.