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1. (WO2006087982) METHOD FOR PRODUCING HEXAGONAL BORON NITRIDE SINGLE CRYSTAL AND HEXAGONAL BORON NITRIDE SINGLE CRYSTAL
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2006/087982    International Application No.:    PCT/JP2006/302408
Publication Date: 24.08.2006 International Filing Date: 07.02.2006
IPC:
C30B 29/38 (2006.01), C30B 9/12 (2006.01)
Applicants: NGK Insulators, Ltd. [JP/JP]; 2-56, Suda-cho, Mizuho-ku, Nagoya-shi, Aichi 4678530 (JP) (For All Designated States Except US).
MORI, Yusuke [JP/JP]; (JP) (For All Designated States Except US).
IWAI, Makoto [JP/JP]; (JP) (For US Only).
IMAI, Katsuhiro [JP/JP]; (JP) (For US Only).
SASAKI, Takatomo [JP/JP]; (JP) (For US Only).
KAWAMURA, Fumio [JP/JP]; (JP) (For US Only).
KAWAHARA, Minoru [JP/JP]; (JP) (For US Only).
ISOBE, Hiroaki [JP/JP]; (JP) (For US Only)
Inventors: IWAI, Makoto; (JP).
IMAI, Katsuhiro; (JP).
SASAKI, Takatomo; (JP).
KAWAMURA, Fumio; (JP).
KAWAHARA, Minoru; (JP).
ISOBE, Hiroaki; (JP)
Agent: HOSODA, Masutoshi; Jowa Takanawa BLDG. 7F 5-4, Takanawa 1-chome Minato-ku, Tokyo 1080074 (JP)
Priority Data:
2005-039423 16.02.2005 JP
Title (EN) METHOD FOR PRODUCING HEXAGONAL BORON NITRIDE SINGLE CRYSTAL AND HEXAGONAL BORON NITRIDE SINGLE CRYSTAL
(FR) PROCÉDÉ DE FABRICATION D’UN MONOCRISTAL HEXAGONAL DE NITRURE DE BORE ET MONOCRISTAL HEXAGONAL DE NITRURE DE BORE
(JA) 六方晶窒化ホウ素単結晶の製造方法および六方晶窒化ホウ素単結晶
Abstract: front page image
(EN)Disclosed is a novel method for growing a hexagonal boron nitride single crystal. By heating, or heating and then slowly cooling boron nitride and a calcium-containing material in a nitrogen-containing atmosphere, a hexagonal boron nitride single crystal is grown in a calcium nitride flux, thereby producing a bulk hexagonal boron nitride single crystal.
(FR)La présente invention décrit un nouveau procédé de croissance d’un monocristal hexagonal de nitrure de bore. En chauffant, ou en chauffant et en refroidissant ensuite lentement, du nitrure de bore et un matériau contenant du calcium dans une atmosphère contenant de l'azote, on fait croître un monocristal hexagonal de nitrure de bore dans un flux de nitrure de calcium, produisant ainsi un monocristal hexagonal de nitrure de bore en vrac.
(JA)本発明の課題は、六方晶窒化ホウ素単結晶を育成可能な新たな方法を提供することである。窒化ホウ素とカルシウム系原料とを窒素を含む雰囲気中で加熱または加熱後、徐冷することによって、窒化カルシウムフラックス中で六方晶窒化ホウ素単結晶が成長し、バルク状六方晶窒化ホウ素単結晶を育成できることを見いだした。
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, LY, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RU, SC, SD, SE, SG, SK, SL, SM, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, YU, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, LV, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)