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1. (WO2006086644) BACK-ILLUMINATED IMAGING DEVICE AND METHOD OF FABRICATING SAME
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2006/086644    International Application No.:    PCT/US2006/004754
Publication Date: 17.08.2006 International Filing Date: 10.02.2006
IPC:
H01L 31/18 (2006.01), H01L 31/09 (2006.01)
Applicants: SARNOFF CORPORATION [US/US]; 201 Washington Road, CN5300, Princeton, New Jersey 08543-5300 (US) (For All Designated States Except US).
SWAIN, Pradyumna, Kumar [IN/US]; (US) (For US Only).
BHASKARAN, Mahalingam [IN/US]; (US) (For US Only)
Inventors: SWAIN, Pradyumna, Kumar; (US).
BHASKARAN, Mahalingam; (US)
Agent: NIGON, Kenneth, N.; RatnerPrestia, P.O. Box 980, Valley Forge, Pennsylvania 19482 (US)
Priority Data:
60/652,409 11.02.2005 US
11/350,546 09.02.2006 US
Title (EN) BACK-ILLUMINATED IMAGING DEVICE AND METHOD OF FABRICATING SAME
(FR) DISPOSITIF D'IMAGERIE RETROECLAIRE ET PROCEDE DE FABRICATION ASSOCIE
Abstract: front page image
(EN)A method for fabricating a back-illuminated semiconductor-imaging device, comprising the steps of providing a substrate comprising a mechanical substrate (25), an insulator layer (20), and a semiconductor substrate (15); applying one or more dopants (95) to the semiconductor substrate (15); growing an epitaxial layer (30) on the semiconductor substrate (15) while simultaneously causing diffusion of the one or more dopants (95) into the epitaxial layer (30) such that, at completion of the growing of the epitaxial layer (30), there exists a net dopant concentration profile (40) in the semiconductor substrate (15) and the epitaxial layer (30) which has an initial maximum value at an interface (35) of the semiconductor substrate (15) and the insulator layer (20) and which decreases monotonically with increasing distance from the interface within an initial portion of the semiconductor substrate (15) and the epitaxial layer (30), and fabricating one or more imaging components (45) in the epitaxial layer (30).
(FR)L'invention concerne un procédé de fabrication d'un dispositif d'imagerie à semi-conducteurs rétroéclairé placé sur un substrat semi-conducteur sur isolant mince ainsi que le dispositif d'imagerie obtenu. Le dispositif obtenu comporte un profil de dopage à variation monotone qui produit un champ électrique désiré et supprime une bande morte située à proximité de la surface arrière.
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, LY, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RU, SC, SD, SE, SG, SK, SL, SM, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, YU, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, LV, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)