WIPO logo
Mobile | Deutsch | Español | Français | 日本語 | 한국어 | Português | Русский | 中文 | العربية |
PATENTSCOPE

Search International and National Patent Collections
World Intellectual Property Organization
Search
 
Browse
 
Translate
 
Options
 
News
 
Login
 
Help
 
Machine translation
1. (WO2006086471) A METHOD TO GROW III-NITRIDE MATERIALS USING NO BUFFER LAYER
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2006/086471    International Application No.:    PCT/US2006/004427
Publication Date: 17.08.2006 International Filing Date: 08.02.2006
IPC:
H01L 21/00 (2006.01), H01L 29/00 (2006.01), H01L 29/06 (2006.01), H01L 29/15 (2006.01), H01L 33/00 (2006.01), H01L 23/58 (2006.01), H01L 31/0256 (2006.01)
Applicants: III-N TECHNOLOGY, INC. [US/US]; 2033 Plymouth, Manhattan, Kansas 66502 (US)
Inventors: LI, Jing; (US)
Agent: HONEYMAN, Marshall; SHOOK, HARDY & BACON L.L.P., 2555 Grand Blvd., Kansas City, Missouri 64108-2613 (US)
Priority Data:
60/650,929 08.02.2005 US
11/103,846 12.04.2005 US
Title (EN) A METHOD TO GROW III-NITRIDE MATERIALS USING NO BUFFER LAYER
(FR) PROCEDE PERMETTANT LA CROISSANCE DE MATERIAUX NITRURES III SANS COUCHE TAMPON
Abstract: front page image
(EN)Disclosed is a method for growing nitride compound semiconductors on sapphire substrates where no low-temperature buffer layer is used. The nitride based compound semiconductor materials and devices grown by the method of the present invention have crystallinity and surface morphology at practical levels with high quality, high stability, and high yield.
(FR)L'invention concerne un procédé qui permet la croissance de semiconducteurs de composés nitrures sur des substrats en saphir sans utilisation d'une couche tampon à basse température. Les matériaux et dispositifs semiconducteurs de composés nitrures de l'invention possèdent une cristallinité et une morphologie de surface à des niveaux pratiques offrant une qualité, une stabilité et un rendement élevés.
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, LY, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RU, SC, SD, SE, SG, SK, SL, SM, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, UZ, VC, VN, YU, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, LV, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)