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Machine translation
1. (WO2006085903) METHOD OF GROWING SEMICONDUCTOR NANOWIRES WITH UNIFORM CROSS-SECTIONAL AREA USING CHEMICAL VAPOR DEPOSITION
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2006/085903    International Application No.:    PCT/US2005/018671
Publication Date: 17.08.2006 International Filing Date: 27.05.2005
IPC:
H01L 21/36 (2006.01), H01L 21/20 (2006.01)
Applicants: AGILENT TECHNOLOGIES, INC. [US/US]; 395 Page Mill Road, Palo Alto, CA 94306 (US) (For All Designated States Except US)
Inventors: YI, Sung, Soo; (US)
Agent: HARDCASTLE, Ian; Agilent Technologies, INC., Intellectual Property Administration, M/S DL-429, P.O. Box 7599, Loveland, CO 80537-0599 (US)
Priority Data:
10/857,191 28.05.2004 US
Title (EN) METHOD OF GROWING SEMICONDUCTOR NANOWIRES WITH UNIFORM CROSS-SECTIONAL AREA USING CHEMICAL VAPOR DEPOSITION
(FR) PROCEDE DE CROISSANCE DE NANOFILS A SEMICONDUCTEUR A AIRE TRANSVERSALE UNIFORME AU MOYEN D'UN DEPOT CHIMIQUE EN PHASE VAPEUR
Abstract: front page image
(EN)A nanowire of a semiconductor material and having a uniform cross-sectional area along its length is grown using a chemical vapor deposition process. In the method, a substrate is provided (102), a catalyst nanoparticle is deposited (104) on the substrate, a gaseous precursor mixture comprising a constituent element of the semiconductor material is passed over (106) the substrate, and adatoms of the constituent element are removed (108) from a lateral surface of the nanowire during the passing of the precursor mixture. Removing the adatoms of the constituent element before such adatoms are incorporated into the nanowire prevents such adatoms from accumulating on the lateral surface of the nanowire and allows the nanowire to grow with a uniform cross-sectional area along its length.
(FR)L'invention concerne un nanofil d'un matériau à semiconducteur et possédant une aire transversale uniforme le long de sa longueur, fabriqué au moyen d'un procédé de dépôt chimique en phase vapeur. Dans ce procédé, un substrat est fabriqué (102), une nanoparticule de catalyseur est déposée (104) sur le substrat, un mélange de précurseur gazeux comprenant un élément constituant du matériau à semiconducteur est transféré (106) sur le substrat, des adatomes de l'élément constituant sont extraits (108) d'une surface latérale du nanofil durant le transfert du mélange de précurseur. L'extraction des adatomes de l'élément constituant avant leur incorporation dans le nanofil empêche ces adatomes de s'accumuler sur la surface latérale du nanofil et permet au nanofil de croître avec une aire transversale uniforme le long de sa longueur.
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RU, SC, SD, SE, SG, SK, SL, SM, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, YU, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)