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1. (WO2006085798) METHOD FOR MANUFACTURING OF ARTICLE COMPRISING SILICON SUBSTRATE WITH SILICON CARBIDE FILM ON ITS SURFACE
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2006/085798    International Application No.:    PCT/RU2006/000067
Publication Date: 17.08.2006 International Filing Date: 10.02.2006
IPC:
C23C 24/08 (2006.01), C30B 31/02 (2006.01), C30B 29/36 (2006.01)
Applicants: OOO 'UPRAVLYAUSHAYA KOMPANIYA 'SOZVEZDIE' [RU/RU]; ul. Panfilova, 12, St.Petersburg, 195027 (RU) (For All Designated States Except US).
FOND PODDERZKI NAUKI I OBRAZOVANIYA [RU/RU]; ul. Tambovskaya, 13, Lit. A, Pomeshenie 3N, St.Petersburg, 192007 (RU) (For All Designated States Except US).
GORDEEV, Sergey Konstantinovich [RU/RU]; (RU) (For US Only).
KORCHAGINA, Svetlana Borisovna [RU/RU]; (RU) (For US Only).
KUKUSHKIN, Sergey Arsenievich [RU/RU]; (RU) (For US Only).
OSIPOV, Andrey Victorovich [RU/RU]; (RU) (For US Only)
Inventors: GORDEEV, Sergey Konstantinovich; (RU).
KORCHAGINA, Svetlana Borisovna; (RU).
KUKUSHKIN, Sergey Arsenievich; (RU).
OSIPOV, Andrey Victorovich; (RU)
Agent: STAROBOGATOVA, Valentina Alekseevna; ul. B Monetnaya, 16, Uridicheskii centr "Petersburg-Intellect", St.Petersburg, 197101 (RU)
Priority Data:
2005103321 10.02.2005 RU
Title (EN) METHOD FOR MANUFACTURING OF ARTICLE COMPRISING SILICON SUBSTRATE WITH SILICON CARBIDE FILM ON ITS SURFACE
(FR) PROCEDES DE FABRICATION D'ARTICLE COMPRENANT UN SUBSTRAT DE SILICIUM AVEC UN FILM DE CARBURE DE SILICIUM SUR SA SURFACE
Abstract: front page image
(EN)The present invention relates to technologies for obtaining semiconductor materials and can be used for creation of semiconductor devices. Technical result is achieved owing to that in the method for manufacturing of an article comprising silicon substrate with silicon-carbide film on its surface, including synthesis of silicon-carbide film on the surface of the substrate by means of joint heating of the substrate and carbon-containing material, as the carbon- containing material a solid material is used which is brought into mechanical contact with the substrate while heating is carried out at a temperature 1100- 14OO °C.
(FR)La présente invention concerne des technologies permettant d'obtenir des matériaux semi-conducteurs qui peuvent être utilisés pour la création de dispositifs semi-conducteurs. Le résultat technique est obtenu grâce au procédés de fabrication d'un article comprenant un substrat de silicium avec un film de carbure de silicium sur sa surface, comprenant la synthèse du film de carbure de silicium sur la surface du substrat par soudage à chaud du substrat et d'un matériau contenant du carbone, comme matériau contenant du carbone un matériau solide est utilisé et mis en contact mécanique avec le substrat pendant le chauffage effectué à une température comprise entre 1100 et 14OO °C.
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, LY, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, SC, SD, SE, SG, SK, SL, SM, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, YU, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, LV, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)