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1. (WO2006085582) SEMICONDUCTOR DEVICE HAVING SILICON NITRIDE-CONTAINING FILM DERIVED FROM POLYSILAZANE AND METHOD FOR MANUFACTURING SAME
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2006/085582    International Application No.:    PCT/JP2006/302252
Publication Date: 17.08.2006 International Filing Date: 09.02.2006
IPC:
H01L 29/78 (2006.01), H01L 21/318 (2006.01), H01L 21/768 (2006.01)
Applicants: AZ Electronic Materials (Japan) K.K. [JP/JP]; Bunkyo Green Court, 28-8, Honkomagome 2-chome, Bunkyo-ku, Tokyo 1130021 (JP) (For All Designated States Except US).
MATSUO, Hideki [JP/JP]; (JP) (For US Only).
ICHIYAMA, Masaaki [JP/JP]; (JP) (For US Only).
NAGURA, Teruno [JP/JP]; (JP) (For US Only)
Inventors: MATSUO, Hideki; (JP).
ICHIYAMA, Masaaki; (JP).
NAGURA, Teruno; (JP)
Agent: YOSHITAKE, Kenji; Kyowa Patent & Law Office, Room 323, Fuji Bldg., 2-3, Marunouchi 3-chome, Chiyoda-ku Tokyo 1000005 (JP)
Priority Data:
2005-034866 10.02.2005 JP
Title (EN) SEMICONDUCTOR DEVICE HAVING SILICON NITRIDE-CONTAINING FILM DERIVED FROM POLYSILAZANE AND METHOD FOR MANUFACTURING SAME
(FR) DISPOSITIF SEMI-CONDUCTEUR AYANT UN FILM CONTENANT DU NITRURE DE SILICIUM DÉRIVÉ DE POLYSILAZANE ET SON PROCÉDÉ DE FABRICATION
(JA) ポリシラザンに由来する窒化ケイ素質膜を有する半導体装置およびその製造方法
Abstract: front page image
(EN)Disclosed is an n-type field effect transistor wherein the drain current is increased. Also disclosed is a method for simply manufacturing such a transistor at low cost. The n-type field effect transistor comprises a silicon nitride-containing film which is formed by applying a coating liquid containing a polysilazane compound and firing the thus-obtained coating film.
(FR)La présente invention décrit un transistor à effet de champ de type n où le courant de drain est augmenté. L'invention décrit également un procédé de fabrication simple d'un tel transistor à faible coût. Le transistor à effet de champ de type n comprend un film comprenant du nitrure de silicium, qui est formé en appliquant un liquide de revêtement comprenant un composé de polysilazane et en chauffant le film de revêtement ainsi obtenu.
(JA) 本発明は、ドレイン電流を増加させたn型電界効果トランジスタ、およびそのトランジスタの簡単かつ低コストな製造方法を提供する。このn型電界効果トランジスタは、窒化ケイ素質膜を具備してなり、その窒化ケイ素質膜が、ポリシラザン化合物を含む塗布液を塗布し、焼成することによって形成されたものである。
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, LY, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RU, SC, SD, SE, SG, SK, SL, SM, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, YU, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, LV, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)