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Machine translation
1. (WO2006085267) SEMICONDUCTOR DEVICE WITH TRENCH FIELD PLATE
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2006/085267    International Application No.:    PCT/IB2006/050398
Publication Date: 17.08.2006 International Filing Date: 07.02.2006
IPC:
H01L 29/78 (2006.01), H01L 29/739 (2006.01), H01L 29/40 (2006.01), H01L 29/423 (2006.01), H01L 29/06 (2006.01), H01L 29/08 (2006.01)
Applicants: NXP B.V. [NL/NL]; High Tech Campus 60, NL-5656 AG Eindhoven (NL) (For All Designated States Except US).
LETAVIC, Theodore [US/US]; (US) (For US Only).
PETRUZZELLO, John [US/US]; (US) (For US Only)
Inventors: LETAVIC, Theodore; (US).
PETRUZZELLO, John; (US)
Agent: PENNINGS, Johannes; NXP Semiconductors, IP Department, High Tech Campus 60, NL-5656 AG Eindhoven (NL)
Priority Data:
60/651,105 08.02.2005 US
60/737,718 17.11.2005 US
Title (EN) SEMICONDUCTOR DEVICE WITH TRENCH FIELD PLATE
(FR) STRUCTURE DE DISPOSITIF A SEMI-CONDUCTEUR, A PLAQUE DE CHAMP CONIQUE ET A GEOMETRIE CYLINDRIQUE DE LA ZONE DE DERIVE
Abstract: front page image
(EN)A vertically oriented self terminatining semiconductor device such as a discrete trench MOS device (10, 38) that includes a cylindrical drift region (18) that extend downward from a surface region to a substrate (11) and a dielectric region (20) that exponentially tapers outward from the cylindrical drift region as the drift region approaches the substrate. A field plate electrode (12) is disposed on the dielectric region. Alternatively, the gate electrode (40, 46) may be disposed on the dialectric region, optionally with an underlying field plate electrode (48) .
(FR)L'invention concerne un dispositif MOS à tranchée discrète à autoterminaison, orientée verticalement (1) qui comprend une zone de dérive cylindrique (18), qui s'étend vers le bas, entre une zone superficielle et un substrat (11) et une zone diélectrique (20) qui diminue de manière exponentielle vers l'extérieur, à partir de la zone de dérive cylindrique, à mesure que la zone de dérive se rapproche du substrat.
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, LY, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RU, SC, SD, SE, SG, SK, SL, SM, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, YU, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, LV, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)