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1. (WO2006083909) METHOD OF MAKING SUBSTITUTIONALLY CARBON-HIGHLY DOPED CRYSTALLINE SI-LAYERS BY CVD
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2006/083909    International Application No.:    PCT/US2006/003465
Publication Date: 10.08.2006 International Filing Date: 31.01.2006
IPC:
C30B 29/06 (2006.01), C30B 25/02 (2006.01), C23C 16/24 (2006.01), H01L 29/10 (2006.01), H01L 21/205 (2006.01)
Applicants: ASM AMERICA, INC. [US/US]; 3440 East University Drive, Phoenix, Arizona 85034-7200 (US) (For All Designated States Except US).
BAUER, Matthias [DE/US]; (US) (For US Only).
WEEKS, Keith, Doran [US/US]; (US) (For US Only).
TOMASINI, Pierre [FR/US]; (US) (For US Only).
CODY, Nyles [US/US]; (US) (For US Only)
Inventors: BAUER, Matthias; (US).
WEEKS, Keith, Doran; (US).
TOMASINI, Pierre; (US).
CODY, Nyles; (US)
Agent: DELANEY, Karoline, A.; Knobbe, Martens, Olson & Bear, Llp, 2040 Main Street, 14th Floor, Irvine, California 92614 (US)
Priority Data:
60/649,990 04.02.2005 US
60/663,434 18.03.2005 US
60/668,420 04.04.2005 US
Title (EN) METHOD OF MAKING SUBSTITUTIONALLY CARBON-HIGHLY DOPED CRYSTALLINE SI-LAYERS BY CVD
(FR) PROCEDES DE PREPARATION DE MATERIAUX CONTENANT DU SI CRISTALLIN SUBSTITUTIONNELLEMENT DOPE AU CARBONE PAR DEPOT CHIMIQUE EN PHASE VAPEUR
Abstract: front page image
(EN)Methods of making Si-containing films that contain relatively high levels of substitutional dopants involve chemical vapor deposition using trisilane and a dopant precursor. Extremely high levels of substitutional incorporation may be obtained, including crystalline silicon films that contain 2.4 atomic % or greater substitutional carbon. Substitutionally doped Si-containing films may be selectively deposited onto the crystalline surfaces of mixed substrates by introducing an etchant gas during deposition.
(FR)L'invention concerne des procédés de préparation de films contenant du Si qui contiennent des niveaux relativement élevés de dopants substitutionnels. Lesdits procédés font appel au dépôt chimique en phase vapeur à l'aide de trisilane et d'un précurseur de dopant. Des niveaux extrêmement élevés d'incorporation substitutionnelle peuvent être obtenus, y compris des films de silicium cristallin qui contiennent 2,4 % atomiques ou davantage de carbone substitutionnel. Les films contenant du Si substitutionnellement dopé peuvent être déposés sélectivement sur les surfaces cristallines de substrats mixtes par introduction d'un gaz d'attaque chimique au cours du dépôt.
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, LY, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RU, SC, SD, SE, SG, SK, SL, SM, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, YU, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, LV, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)