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Machine translation
1. (WO2006083821) SELECTIVE DEPOSITION OF SILICON-CONTAINING FILMS
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2006/083821    International Application No.:    PCT/US2006/003333
Publication Date: 10.08.2006 International Filing Date: 31.01.2006
IPC:
C30B 29/06 (2006.01), C30B 25/02 (2006.01), C23C 16/24 (2006.01), H01L 29/10 (2006.01), H01L 21/205 (2006.01), C23C 16/448 (2006.01)
Applicants: ASM AMERICA, INC. [US/US]; 3440 East University Drive, Phoenix, Arizona 85034-7200 (US) (For All Designated States Except US).
BAUER, Matthias [DE/US]; (US) (For US Only).
ARENA, Chantal [US/US]; (US) (For US Only).
BERTRAM, Ronald [US/US]; (US) (For US Only).
TOMASINI, Pierre [FR/US]; (US) (For US Only).
CODY, Nyles [US/US]; (US) (For US Only).
BRABANT, Paul [US/US]; (US) (For US Only).
ITALIANO, Joseph [US/US]; (US) (For US Only).
JACOBSON, Paul [US/US]; (US) (For US Only).
WEEKS, Keith, Doran [US/US]; (US) (For US Only)
Inventors: BAUER, Matthias; (US).
ARENA, Chantal; (US).
BERTRAM, Ronald; (US).
TOMASINI, Pierre; (US).
CODY, Nyles; (US).
BRABANT, Paul; (US).
ITALIANO, Joseph; (US).
JACOBSON, Paul; (US).
WEEKS, Keith, Doran; (US)
Agent: DELANEY, Karoline, A.; Knobbe, Martens, Olson & Bear, LLP, 2040 Main Street, 14th Floor, Irvine, California 92614 (US)
Priority Data:
60/649,990 04.02.2005 US
60/663,434 18.03.2005 US
60/668,420 04.04.2005 US
Title (EN) SELECTIVE DEPOSITION OF SILICON-CONTAINING FILMS
(FR) DEPOT SELECTIF DE FILMS CONTENANT DU SILICIUM
Abstract: front page image
(EN)Chemical vapor deposition methods use trisilane and a halogen-containing etchant source (such as chlorine) to selectively deposit Si-containing films over selected regions of mixed substrates. Dopant sources may be intermixed with the trisilane and the etchant source to selectively deposit doped Si-containing films. The selective deposition methods are useful in a variety of applications, such as semiconductor manufacturing.
(FR)Les procédés de dépôt chimique en phase vapeur de l'invention utilisent du trisilane et une source d'agent d'attaque chimique contenant un halogène (tel que le chlore) pour déposer sélectivement des films contenant du Si sur des zones sélectionnées de substrats mixtes. Des sources de dopant peuvent être mélangées avec le trisilane et la source d'agent d'attaque chimique pour déposer sélectivement des films contenant du Si dopés. Ces procédés de dépôt sélectif sont utiles dans diverses applications, telles que la fabrication de semi-conducteurs.
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, LY, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RU, SC, SD, SE, SG, SK, SL, SM, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, YU, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, LV, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)