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Machine translation
1. (WO2006083769) N2-BASED PLASMA TREATMENT FOR POROUS LOW-K DIELECTRIC FILMS
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2006/083769    International Application No.:    PCT/US2006/003231
Publication Date: 10.08.2006 International Filing Date: 30.01.2006
IPC:
H01L 21/469 (2006.01)
Applicants: TEXAS INSTRUMENTS INCORPORATED [US/US]; P.O. Box 655474, Mail Station 3999, Dallas, Texas 75265-5474 (US) (For All Designated States Except US).
AJMERA, Sameer, Kumar [US/US]; (US) (For US Only).
SMITH, Patricia, Beauregard [US/US]; (US) (For US Only).
JIN, Changming [US/US]; (US) (For US Only)
Inventors: AJMERA, Sameer, Kumar; (US).
SMITH, Patricia, Beauregard; (US).
JIN, Changming; (US)
Agent: FRANZ, Warren, L.; Texas Instruments Incorporated, P.O. Box 655474, M/S 3999, Dallas, Texas 75265-5474 (US)
Priority Data:
11/046,230 31.01.2005 US
Title (EN) N2-BASED PLASMA TREATMENT FOR POROUS LOW-K DIELECTRIC FILMS
(FR) TRAITEMENT AU PLASMA A BASE DE N2 POUR FILMS DIELECTRIQUES POREUX A FAIBLE CONSTANTE DIELECTRIQUE
Abstract: front page image
(EN)A semiconductor device is fabricated by forming a low-k dielectric material (20) over a substrate (10), depositing a liner (65) on a portion of the low-k dielectric material, and exposing the liner to a plasma (70). A barrier layer may be deposited over the liner.
(FR)On fabrique un dispositif en semi-conducteur en formant une matière diélectrique à faible constante diélectrique (20) sur un substrat (10), en déposant une chemise (65) sur une partie de la matière à faible constante diélectrique et en exposant la chemise à un plasma (70). On peut déposer une couche barrière sur la chemise.
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, LY, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RU, SC, SD, SE, SG, SK, SL, SM, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, YU, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, LV, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)