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Machine translation
1. (WO2006083607) RADIATION-HARDENED SRAM CELL WITH WRITE ERROR PROTECTION
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2006/083607    International Application No.:    PCT/US2006/002339
Publication Date: 10.08.2006 International Filing Date: 24.01.2006
IPC:
G11C 11/412 (2006.01)
Applicants: HONEYWELL INTERNATIONAL INC. [US/US]; 101 Columbia Road, P.O. box 2245, Morristown, New Jersey 07960 (US) (For All Designated States Except US).
LIU, Harry [CN/US]; (US) (For US Only)
Inventors: LIU, Harry; (US)
Agent: HOIRIIS, David; HONEYWELL INTERNATIONAL INC., 101 Columbia Road, P.O. box 2245, Morristown, New Jersey 07960 (US)
Priority Data:
11/051,916 04.02.2005 US
Title (EN) RADIATION-HARDENED SRAM CELL WITH WRITE ERROR PROTECTION
(FR) CELLULE SRAM DURCIE PAR RADIATION AVEC PROTECTION CONTRE LES ERREURS D’ÉCRITURE
Abstract: front page image
(EN)A method and system is disclosed for preventing write errors in a Single Event Upset (SEU) hardened static random access memory (SRAM) cell. A compensating element has been connected to a feedback path of the SRAM cell. The compensating element operates to cancel out capacitate coupling generated in an active delay element of the SRAM cell. If the compensating element sufficiently cancels the effects of the capacitate coupling, a write error will not occur in the SRAM cell. The compensating element also occupies a smaller silicon area than other proposed solutions.
(FR)L’invention concerne un procédé et un système pour empêcher les erreurs d’écriture dans une cellule de mémoire vive statique (SRAM) durcie de type Single Event Upset (SEU). Un élément de compensation est connecté à un chemin de retour de la cellule SRAM. L’élément de compensation a pour but d’annuler le couplage capacitif généré dans l’élément de temporisation actif de la cellule SRAM. Si l’élément de compensation annule suffisamment les effets du couplage capacitif, il n’y aura pas d’erreur d’écriture dans la cellule SRAM. L’élément de compensation occupe également une surface de silicium plus petite que d’autres solutions proposées.
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, LY, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RU, SC, SD, SE, SG, SK, SL, SM, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, YU, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, LV, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)