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Machine translation
1. (WO2006083577) MONOLITHIC INTEGRATED CIRCUIT HAVING THREE FIELD EFFECT TRANSISTORS
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2006/083577    International Application No.:    PCT/US2006/002040
Publication Date: 10.08.2006 International Filing Date: 20.01.2006
IPC:
H01L 27/06 (2006.01), H01L 27/088 (2006.01), H01L 27/095 (2006.01)
Applicants: RAYTHEON COMPANY [US/US]; 870 Winter Street, Waltham, MA 02451-1449 (US) (For All Designated States Except US).
HWANG, Kiuchul [US/US]; (US) (For US Only).
ADLERSTEIN, Michael, G. [US/US]; (US) (For US Only)
Inventors: HWANG, Kiuchul; (US).
ADLERSTEIN, Michael, G.; (US)
Agent: MOFFORD, Donald, F.; Daly, Crowley, Mofford & Durkee, LLP, Suite 301a, 354a Turnpike St., Canton, MA 02021 (US)
Priority Data:
11/051,816 04.02.2005 US
Title (EN) MONOLITHIC INTEGRATED CIRCUIT HAVING THREE FIELD EFFECT TRANSISTORS
(FR) CIRCUIT MONOLITHIQUE POSSEDANT TROIS TRANSISTORS A EFFET DE CHAMP
Abstract: front page image
(EN)A semiconductor structure having: a III-V substrate structure; an enhancement mode transistor device disposed in a first region of the structure; a depletion mode transistor device disposed in a laterally displaced second region of the structure; and a RF/microwave/milli-meter wave transistor device formed in a laterally displaced third region thereof.
(FR)L'invention porte sur une structure à semi-conducteurs possédant: une structure de substrat III-V; un transistor à enrichissement disposé dans une première région de la structure; un transistor à mode de déplétion disposé dans une seconde région latérale de la structure et un transistor radioélectrique/micro-ondes, à ondes millimétriques, formé dans une troisième région latérale de la structure.
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, LY, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RU, SC, SD, SE, SG, SK, SL, SM, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, YU, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, LV, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)