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1. (WO2006083415) IMPROVING BEAM NEUTRALIZATION IN LOW-ENERGY HIGH-CURRENT RIBBON-BEAM IMPLANTERS
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2006/083415    International Application No.:    PCT/US2005/046125
Publication Date: 10.08.2006 International Filing Date: 20.12.2005
IPC:
A61N 5/00 (2006.01), G21G 5/00 (2006.01)
Applicants: PURSER, Kenneth, H. [US/US]; (US).
TURNER, Norman, L. [US/US]; (US)
Inventors: PURSER, Kenneth, H.; (US).
TURNER, Norman, L.; (US)
Agent: FRAME, Robert, C.; Nields & Lemack, 176 E. Main Street - Suite 7, Westboro, MA 01581 (US)
Priority Data:
60/637,625 20.12.2004 US
60/638,848 23.12.2004 US
60/642,612 10.01.2005 US
60/645,458 19.01.2005 US
  20.12.2005 US (IA Considered Withdrawn 13.06.2006)
Title (EN) IMPROVING BEAM NEUTRALIZATION IN LOW-ENERGY HIGH-CURRENT RIBBON-BEAM IMPLANTERS
(FR) AMELIORATION DE LA NEUTRALISATION DE FAISCEAU DANS DES IMPLANTEURS DE FAISCEAU RUBAN HAUT-COURANT FAIBLE ENERGIE
Abstract: front page image
(EN)The fabrication of modern semiconducting integrated circuits often requires implantation steps that involve high currents of low-energy charged dopant atoms. When employing such beams, the addition of electrons or negative ions for neutralizing the effects of space charge is often crucial for achieving success. Without this supplement, ion beams can 'blow-up' causing loss of intensity and disruption of beam focusing. In the present disclosure, methods are presented for introducing and constraining neutralizing low-energy electrons and negative ions within the boundaries of ribbon beams within regions of magnetic field deflection. Apparatus is described for maintaining neutralization based upon a reduction of electron losses, plasma bridge connections and secondary electron production. As part of plasma introduction to the deflection region a novel cryogenic pumping apparatus selectively removes neutral atoms from a plasma stream. Described herein is a magnetic pole of a deflection magnet. Although those skilled in the art will recognize that the pole surface (101) may actually be part of the underlying magnetic return yoke (102) in the preferred embodiment the surfaces of the poles (103) are located within the vacuum chamber (104) rather than outside it. The magnetic field is produced by the coils (112). This allows the magnetic poles to be as close as needed to the trajectories of the ion beam (105) without wasting distance for a wide vacuum envelope that needs thick walls to withstand atmospheric forces.
(FR)La fabrication de circuits intégrés semi-conducteurs modernes nécessite souvent des étapes de mise oeuvre impliquant des courants élevés d'atomes dopants chargés faible énergie. L'utilisation de tels faisceaux requièrent impérieusement l'addition d'électrons ou d'ions négatifs pour neutraliser les effets de la charge spatiale afin d'assurer le succès. Sans cette addition, les faisceaux ioniques peuvent 'éclater', entraînant ainsi la perte d'intensité et la rupture de la focalisation du faisceau. Dans cette invention, on prévoit des procédés d'introduction et de limitation de la neutralisation des électrons faible énergie et des ions négatifs dans les limites des faisceaux rubans au sein des régions de la déflexion du champ magnétique. L'appareil de cette invention permet de maintenir la neutralisation d'après la réduction de pertes électroniques, de connexions de pont plasma et une production auxiliaire d'électrons. Impliqué dans l'introduction plasma à une région de déflexion, un nouvelle appareil de pompage cryogène supprime sélectivement les atomes neutres provenant d'un écoulement de plasma.
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, LY, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RU, SC, SD, SE, SG, SK, SL, SM, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, YU, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, LV, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)