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Machine translation
1. (WO2006083383) LOW TEMPERATURE GROWN INSULATED GATE PHEMT DEVICE
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2006/083383    International Application No.:    PCT/US2005/043357
Publication Date: 10.08.2006 International Filing Date: 01.12.2005
IPC:
H01L 29/739 (2006.01), H01L 31/072 (2006.01), H01L 31/109 (2006.01), H01L 31/0328 (2006.01), H01L 31/0336 (2006.01)
Applicants: BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION, INC. [US/US]; 65 Spit Brook Road, NHQ01-719, Nashua, New Hampshire 03060-6909 (US) (For All Designated States Except US).
NICHOLS, Kirby, B [US/US]; (US) (For US Only).
ACTIS, Robert [US/US]; (US) (For US Only).
XU, Dong [CN/US]; (US) (For US Only).
KONG, Wendell, M., T. [US/US]; (US) (For US Only)
Inventors: NICHOLS, Kirby, B; (US).
ACTIS, Robert; (US).
XU, Dong; (US).
KONG, Wendell, M., T.; (US)
Agent: HAN, J., Mark.; Graybeal Jackson Haley LLP, 155 - 108th Ave NE, Suite 350, Bellevue, Washington 98004-5973 (US)
Priority Data:
60/632,710 01.12.2004 US
Title (EN) LOW TEMPERATURE GROWN INSULATED GATE PHEMT DEVICE
(FR) DISPOSITIF PHEMT A GRILLE ISOLEE ET A CROISSANCE A BASSE TEMPERATURE (LTG) ET PROCEDE ASSOCIE
Abstract: front page image
(EN)A pseudomorphic-high-electron-mobility-transistor (PHEMT) includes a substrate, a low-temperature-grown (LTG) GaAs gate-insulator layer disposed on the substrate, and a gate electrode disposed on the gate-insulator layer.
(FR)L'invention concerne un transistor pseudomorphique à haute mobilité électronique (PHEMT) comprenant un substrat, une couche isolante de grille GaAs à croissance à basse température (LTG) disposée sur le substrat et une électrode de grille disposée sur la couche isolante de grille.
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, LY, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RU, SC, SD, SE, SG, SK, SL, SM, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, YU, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, LV, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)