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1. (WO2006082746) FILM OF SEMICONDUCTOR SINGLE CRYSTAL OF n-TYPE (100) FACE ORIENTED DIAMOND DOPED WITH PHOSPHORUS ATOM AND PROCESS FOR PRODUCING THE SAME
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2006/082746    International Application No.:    PCT/JP2006/301210
Publication Date: 10.08.2006 International Filing Date: 26.01.2006
IPC:
C30B 29/04 (2006.01), C23C 16/27 (2006.01), H01L 21/205 (2006.01)
Applicants: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY [JP/JP]; 3-1, Kasumigaseki 1-chome, Chiyoda-ku, Tokyo 1008921 (JP) (For All Designated States Except US).
KATO, Hiromitsu [JP/JP]; (JP) (For US Only).
YAMASAKI, Satoshi [JP/JP]; (JP) (For US Only).
OOKUSHI, Hideyo [JP/JP]; (JP) (For US Only).
SHIKATA, Shinichi [JP/JP]; (JP) (For US Only)
Inventors: KATO, Hiromitsu; (JP).
YAMASAKI, Satoshi; (JP).
OOKUSHI, Hideyo; (JP).
SHIKATA, Shinichi; (JP)
Priority Data:
2005-027181 03.02.2005 JP
Title (EN) FILM OF SEMICONDUCTOR SINGLE CRYSTAL OF n-TYPE (100) FACE ORIENTED DIAMOND DOPED WITH PHOSPHORUS ATOM AND PROCESS FOR PRODUCING THE SAME
(FR) FILM EN MONOCRISTAL SEMICONDUCTEUR DE DIAMANT A FACES ORIENTEES DE TYPE N DOPE AVEC UN ATOME DE PHOSPHORE ET PROCEDE DE PRODUCTION DE CE DERNIER
(JA) リン原子がドープされたn型(100)面方位ダイヤモンド半導体単結晶膜及びその製造方法
Abstract: front page image
(EN)A film of semiconductor single crystal of n-type (100) face oriented diamond doped with a phosphorus atom; and a process for producing the same. These are characterized in that use is made of a substrate of (100) face oriented diamond and that by vapor phase growing means, while causing hydrogen, a hydrocarbon and a phosphorus compound to be present in a vapor phase, epitaxial growth of (100) face oriented diamond is conducted on the substrate under such conditions that the ratio of phosphorus atoms to carbon atoms in the vapor phase is ≥ 0.1% and the ratio of carbon atoms to hydrogen atoms ≥ 0.05%.
(FR)La présente invention concerne un film en monocristal semiconducteur de diamant à faces orientées de type n (100) dopé avec un atome de phosphore et un procédé de production de ce dernier. Le film et le procédé selon l'invention se caractérisent en ce qu'on utilise un substrat de diamant à faces orientées (100) et un dispositif de croissance en phase vapeur qui permet de réunir en phase vapeur de l'hydrogène, un hydrocarbure et un composé de phosphore, afin de permettre de réaliser la croissance épitaxiale de diamant à faces orientées (100), sur ledit substrat dans des conditions telles que le rapport entre les atomes de phosphore et les atomes de carbone dans la phase vapeur soit $m(G) 0,1 % et que le rapport entre les atomes de carbone et les atomes d'hydrogène soit $m(G) 0,05 %.
(JA) リン原子がドープされたn型(100)面方位ダイヤモンド半導体単結晶膜及びその製造方法を提供するため、ダイヤモンド基板が、(100)面方位ダイヤモンドであり、気相成長手段により、水素、炭化水素及びリン化合物を気相中に存在させ、気相中の炭素原子に対するリン原子の比が0.1%以上であり、水素原子に対する炭素原子の比が0.05%以上である条件で(100)面方位ダイヤモンドを基板上にエピタキシャル成長させることを特徴とするn型(100)面方位ダイヤモンド半導体単結晶膜及びその製造方法。  
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, KE, KG, KM, KN, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, LY, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RU, SC, SD, SE, SG, SK, SL, SM, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, YU, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, LV, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)