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Pub. No.:    WO/2006/082617    International Application No.:    PCT/JP2005/001330
Publication Date: 10.08.2006 International Filing Date: 31.01.2005
H01L 29/78 (2006.01)
Applicants: SHINDENGEN ELECTRIC MANUFACTURING CO., LTD. [JP/JP]; 2-1, Ohtemachi 2-chome, Chiyoda-ku, Tokyo 1000004 (JP) (For All Designated States Except US).
TAKEMORI, Toshiyuki [JP/JP]; (JP) (For US Only).
WATANABE, Yuji [JP/JP]; (JP) (For US Only).
SASAOKA, Fuminori [JP/JP]; (JP) (For US Only).
MATSUYAMA, Kazushige [JP/JP]; (JP) (For US Only).
OHSHIMA, Kunihito [JP/JP]; (JP) (For US Only).
ITOI, Masato [JP/JP]; (JP) (For US Only)
Inventors: TAKEMORI, Toshiyuki; (JP).
SASAOKA, Fuminori; (JP).
MATSUYAMA, Kazushige; (JP).
OHSHIMA, Kunihito; (JP).
ITOI, Masato; (JP)
Agent: SHIGA, Masatake; 2-3-1, Yaesu Chuo-ku, Tokyo 1048453 (JP)
Priority Data:
(JA) 半導体装置
Abstract: front page image
(EN)On the surface of a drift layer (102), a carrier extracting region (112) containing a P-type impurity is formed to be brought into contact with a P-type body region (110). The depth (distance X1) of the carrier extracting region (112) from the surface of the drift layer (102) is less than the depth (distance X2) of a trench (106) from the surface of the drift layer (102). A small number of carriers, which have been injected into the drift layer (102) while a semiconductor device (1a) is operated, flow into the carrier extracting region (112).
(FR)Sur la surface d'une couche de dérive (102), une zone d'extraction de support (112) contenant une impureté de type P est formée pour être mise en contact avec une zone de corps de type P (110). La profondeur (distance X1) de la zone d'extraction de support (112), à partir de la surface de la couche de dérive (102), est inférieure à la profondeur (distance X2) d'une tranchée (106), à partir de la surface de la couche de dérive (102). Un petit nombre de supports, qui ont été injectés dans la couche de dérive (102), pendant qu'un dispositif semi-conducteur (1a) est activé, s'écoule dans la zone d'extraction de support (112).
(JA) ドリフト層102の表面において、P型ボディ領域110に接するように、P型不純物を含むキャリア引き抜き領域112が形成されている。ドリフト層102の表面からのキャリア引き抜き領域112の深さ(距離X)は、ドリフト層102の表面からのトレンチ106の深さ(距離X)よりも小さい。このキャリア引き抜き領域112には、半導体装置1aの動作時にドリフト層102に注入された少数キャリアが流れ込む。
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, JP, KE, KG, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RU, SC, SD, SE, SG, SK, SL, SM, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, YU, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)