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Machine translation
1. (WO2006082467) SUBSTRATE FOR CRYSTAL GROWING A NITRIDE SEMICONDUCTOR
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2006/082467    International Application No.:    PCT/IB2005/000436
Publication Date: 10.08.2006 International Filing Date: 01.02.2005
IPC:
C30B 23/02 (2006.01), C30B 29/38 (2006.01), C30B 29/40 (2006.01), H01L 21/762 (2006.01)
Applicants: S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES [FR/FR]; Parc Technologique des Fontaines, Chemin des Franques, F-38190 Bernin (FR) (AE, AG, AL, AM, AT, AU, AZ, BA, BB, BE, BF, BG, BJ, BR, BW, BY, BZ, CA, CF, CG, CH, CI, CM, CN, CO, CR, CU, CY, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, FR, GA, GB, GD, GE, GH, GM, GN, GQ, GR, GW, HR, HU, ID, IE, IL, IN, IS, IT, JP, KE, KG, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, MA, MC, MD, MG, MK, ML, MN, MR, MW, MX, MZ, NA, NE, NI, NL, NO, NZ, OM, PG, PH, PL, PT, RO, RU, SC, SD, SE, SG, SI, SK, SL, SM, SN, SY, SZ, TD, TG, TJ, TM, TN, TR, TT, TZ, UA, UG, UZ, VC, VN, YU, ZA, ZM, ZW only).
PICOGIGA INTERNATIONAL [FR/FR]; Chemin des Franques, F-38190 Bernin (FR) (AE, AG, AL, AM, AT, AU, AZ, BA, BB, BE, BF, BG, BJ, BR, BW, BY, BZ, CA, CF, CG, CH, CI, CM, CN, CO, CR, CU, CY, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, FR, GA, GB, GD, GE, GH, GM, GN, GQ, GR, GW, HR, HU, ID, IE, IL, IN, IS, IT, JP, KE, KG, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, MA, MC, MD, MG, MK, ML, MN, MR, MW, MX, MZ, NA, NE, NI, NL, NO, NZ, OM, PG, PH, PL, PT, RO, RU, SC, SD, SE, SG, SI, SK, SL, SM, SN, SY, SZ, TD, TG, TJ, TM, TN, TR, TT, TZ, UA, UG, UZ, VC, VN, YU, ZA, ZM, ZW only).
FAURE, Bruce [FR/FR]; (FR) (For US Only).
LETERTRE, Fabrice [FR/FR]; (FR) (For US Only).
LAHRECHE, Hacène [FR/FR]; (FR) (For US Only)
Inventors: FAURE, Bruce; (FR).
LETERTRE, Fabrice; (FR).
LAHRECHE, Hacène; (FR)
Agent: MARTIN, Jean-Jacques; Cabinet Regimbeau, 20, rue de Chazelles, F-75847 Paris Cedex 17 (FR)
Priority Data:
Title (EN) SUBSTRATE FOR CRYSTAL GROWING A NITRIDE SEMICONDUCTOR
(FR) SUBSTRAT DESTINE A LA CRISTALLOGENESE D'UN SEMI-CONDUCTEUR DE NITRURE
Abstract: front page image
(EN)The invention relates to a substrate (10) for crystalline growing an alloy, comprising at least one atomic element of column III and nitrogen, on the front side (1) of the substrate (10), characterized in that the substrate (10) comprises in its rear side (2) a rear layer (12) of a non-metallic infrared­absorptive/emittive material. The invention also relates to a wafer comprising such a substrate and a layer grown on this substrate. The invention also relates to the method of manufacturing the said substrate.
(FR)L'invention concerne un substrat (10) destiné à la cristallogénène d'un alliage et comprenant au moins un élément atomique de la colonne III et d'azote, sur la face frontale (1) du substrat (10). L'invention est caractérisée en ce que le substrat (10) comprend sur sa face arrière (2) une couche arrière (12) d'un matériau absorbant/émettant l'infrarouge non métallique. L'invention concerne également une plaquette comportant un tel substrat et une couche générée sur ce substrat. L'invention concerne enfin le procédé de production de ce substrat.
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, JP, KE, KG, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RU, SC, SD, SE, SG, SK, SL, SM, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, YU, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)