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Machine translation
1. (WO2006082008) PILLAR PHASE CHANGE MEMORY CELL
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2006/082008    International Application No.:    PCT/EP2006/000784
Publication Date: 10.08.2006 International Filing Date: 30.01.2006
IPC:
H01L 45/00 (2006.01), H01L 27/24 (2006.01), G11C 16/02 (2006.01)
Applicants: QIMONDA AG [DE/DE]; Gustav-Heinemann-Ring 212, 81739 München (DE) (For All Designated States Except US).
HAPP, Thomas [DE/US]; (US) (For US Only)
Inventors: HAPP, Thomas; (US)
Agent: JEHLE, Volker; Bosch, Graf von Stosch, Jehle Patentanwaltsgesellschaft mbH, Flüggenstr. 13, 80639 München (DE)
Priority Data:
11/048,186 01.02.2005 US
Title (EN) PILLAR PHASE CHANGE MEMORY CELL
(FR) CELLULE MEMOIRE A CHANGEMENT DE PHASE EN COLONNE
Abstract: front page image
(EN)The present invention includes a phase-change memory cell device and method that includes a memory cell, a selection device, a contact, and a sublithographic pillar. The contact is coupled to the selection device. The phase-change pillar is coupled to the contact. The sublithographic pillar is coupled to the contact. The sublithographic pillar is surrounded by insulating material thereby defining sublithographic lateral dimensions of the sublithographic pillar. There is also sublithographic contact between the sublithographic pillar and the contact.
(FR)L'invention concerne un dispositif de cellule mémoire à changement de phase et un procédé comprenant une cellule mémoire, un dispositif de sélection, un contact et une colonne sublithographique. Le contact est couplé au dispositif de sélection. La colonne de changement de phase est couplée au contact. La colonne sublithographique est couplée au contact et entourée d'une matière isolante définissant ainsi les dimensions latérales sublithographiques de la colonne sublithographique. L'invention concerne également un contact sublithographique entre la colonne sublithographique et le contact.
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, LY, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RU, SC, SD, SE, SG, SK, SL, SM, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, YU, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, LV, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)