WIPO logo
Mobile | Deutsch | Español | Français | 日本語 | 한국어 | Português | Русский | 中文 | العربية |
PATENTSCOPE

Search International and National Patent Collections
World Intellectual Property Organization
Search
 
Browse
 
Translate
 
Options
 
News
 
Login
 
Help
 
Machine translation
1. (WO2006081589) TUNGSTEN ELECTROPROCESSING
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2006/081589    International Application No.:    PCT/US2006/004873
Publication Date: 03.08.2006 International Filing Date: 27.01.2006
IPC:
B24B 37/04 (2012.01)
Applicants: APPLIED MATERIALS, INC. [US/US]; 3050 Bowers Avenue, Santa Clara, CA 95054 (US) (For All Designated States Except US).
JIA, Renhe [CN/US]; (US) (For US Only).
WANG, Zhihong [CN/US]; (US) (For US Only).
TIAN, Yuan [CN/US]; (US) (For US Only).
TRAN, Huyen, Karen [US/US]; (US) (For US Only).
MAO, Daxin [CN/US]; (US) (For US Only).
TSAI, Stan D. [CA/US]; (US) (For US Only).
KARUPPIAH, Laksh [US/US]; (US) (For US Only).
CHEN, Liang-Yuh [--/US]; (US) (For US Only)
Inventors: JIA, Renhe; (US).
WANG, Zhihong; (US).
TIAN, Yuan; (US).
TRAN, Huyen, Karen; (US).
MAO, Daxin; (US).
TSAI, Stan D.; (US).
KARUPPIAH, Laksh; (US).
CHEN, Liang-Yuh; (US)
Agent: PATTERSON, B. Todd; Patterson & Sheridan, L.L.P., 3040 Post Oak Blvd., Suite 1500, Houston, Texas 77056-6582 (US)
Priority Data:
60/647,944 28.01.2005 US
Title (EN) TUNGSTEN ELECTROPROCESSING
(FR) ELECTROTRAITEMENT DE TUNGSTENE
Abstract: front page image
(EN)Methods for polishing tungsten are provided. During ECMP, increasing the voltage to the pad is not always enough to increase the polishing rate. When polishing tungsten, simply increasing the applied voltage will, in some cases, actually decrease the removal rate. By increasing the down force pressure between the polishing pad and the substrate, the applied voltage, and the rotation speed of the substrate and the polishing pad, the tungsten removal rate will also increase.
(FR)L'invention concerne des procédés permettant de polir du tungstène. Pendant ECMP, l'augmentation de la tension dans le tampon n'est pas toujours suffisante pour augmenter la vitesse de polissage. Lors du polissage du tungstène, la simple augmentation de la tension appliquée diminuera, dans certains cas, la vitesse d'élimination. L'augmentation de la pression de la force aval entre le tampon à polir et le substrat, la tension appliquée et la vitesse de rotation du substrat et le tampon à polir permet d'augmenter la vitesse d'élimination du tungstène.
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, LY, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RU, SC, SD, SE, SG, SK, SL, SM, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, YU, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, LV, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)