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1. (WO2006081304) BORON-DOPED DIAMOND SEMICONDUCTOR
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2006/081304    International Application No.:    PCT/US2006/002669
Publication Date: 03.08.2006 International Filing Date: 26.01.2006
IPC:
H01L 21/04 (2006.01), H01L 29/872 (2006.01), H01L 29/16 (2006.01)
Applicants: APOLLO DIAMOND, INC. [US/US]; P.o. Box 670, Framingham, Massachusetts 01704 (US) (For All Designated States Except US).
LINARES, Robert [US/US]; (US) (For US Only)
Inventors: LINARES, Robert; (US)
Agent: STEFFEY, Charles, E.; Schwegman, Lundberg, Woessner & Kluth, P.A., P.o. Box 2938, Minneapolis, Minnesota 55402 (US)
Priority Data:
11/043,684 26.01.2005 US
Title (EN) BORON-DOPED DIAMOND SEMICONDUCTOR
(FR) SEMI-CONDUCTEUR EN DIAMANT DOPE AU BORE
Abstract: front page image
(EN)First and second synthetic diamond regions are doped with boron. The second synthetic diamond region is doped with boron to a greater degree than the first synthetic diamond region, and in physical contact with the first synthetic diamond region. In a further example embodiment, the first and second synthetic diamond regions form a diamond semiconductor, such as a Schottky diode when attached to at least one metallic lead. The diamond is highly 12C enriched diamond in order to increase the thermal conductivity. The manufacturing process involves the separation of one of the diamond layers along a hydrogen implant layer.
(FR)L'invention concerne une première zone de diamant synthétique et une seconde zone de diamant synthétique dopées au bore. La seconde zone de diamant synthétique est dopée au bore à un degré supérieur à la première zone de diamant synthétique, et se trouve en contact physique avec la première zone de diamant synthétique. Dans un autre mode de réalisation de l'invention, la première zone de diamant synthétique et la seconde zone de diamant synthétique forment un semi-conducteur en diamant, notamment une diode de Schottky, lorsque ce dernier est fixé sur au moins un câble métallique.
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, LY, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RU, SC, SD, SE, SG, SK, SL, SM, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, YU, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, LV, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)