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1. (WO2006080586) METHOD FOR FORMING GaN FILM, SEMICONDUCTOR DEVICE, METHOD FOR FORMING GROUP III NITRIDE THIN FILM, AND SEMICONDUCTOR DEVICE HAVING GROUP III NITRIDE THIN FILM
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2006/080586    International Application No.:    PCT/JP2006/301938
Publication Date: 03.08.2006 International Filing Date: 31.01.2006
IPC:
H01L 21/205 (2006.01), C23C 14/06 (2006.01), C23C 16/34 (2006.01), C30B 29/38 (2006.01), H01L 21/203 (2006.01)
Applicants: Kanagawa Academy of Science and Technology [JP/JP]; 2-1, Sakado 3-chome, Takatsu-ku, Kawasaki-shi, Kanagawa 2130012 (JP) (For All Designated States Except US).
The University of Tokyo [JP/JP]; 3-1, Hongo 7-chome, Bunkyo-ku, Tokyo 1130033 (JP) (For All Designated States Except US).
FUJIOKA, Hiroshi [JP/JP]; (JP) (For US Only).
KOBAYASHI, Atsushi [JP/JP]; (JP) (For US Only)
Inventors: FUJIOKA, Hiroshi; (JP).
KOBAYASHI, Atsushi; (JP)
Agent: KOIKE, Akira; 11th Floor Yamato Seimei Bldg. 1-7, Uchisaiwai-cho 1-chome Chiyoda-ku, Tokyo 1000011 (JP)
Priority Data:
2005-024034 31.01.2005 JP
2005-258571 06.09.2005 JP
Title (EN) METHOD FOR FORMING GaN FILM, SEMICONDUCTOR DEVICE, METHOD FOR FORMING GROUP III NITRIDE THIN FILM, AND SEMICONDUCTOR DEVICE HAVING GROUP III NITRIDE THIN FILM
(FR) PROCEDE DE FORMATION DE FILM GaN, DISPOSITIF A SEMI-CONDUCTEUR, PROCEDE DE FORMATION DE FILM MINCE DE NITRURE DU GROUPE III ET DISPOSITIF A SEMI-CONDUCTEUR PRESENTANT UN FILM MINCE DE NITRURE DU GROUPE III
(JA) GaN膜生成方法及び半導体素子並びにIII族窒化物の薄膜生成方法及びIII族窒化物の薄膜を有する半導体素子
Abstract: front page image
(EN)Disclosed is a nitride semiconductor device (10) having a GaN film wherein a GaN layer (12) is formed on a planarized surface of a ZnO substrate (11). The GaN layer (12) is formed by a first film-forming step wherein GaN is epitaxially grown at a temperature not more than 300˚C and a second film-forming step wherein GaN is epitaxially grown on the GaN film formed in the first film-forming step at a temperature of not less than 550˚C.
(FR)L’invention concerne un dispositif à semi-conducteur nitruré (10) présentant un film GaN dans lequel une couche de GaN (12) est formée sur une surface planarisée d'un substrat ZnO (11). La couche de GaN (12) est formée lors d’une première étape de formation de film dans laquelle le GaN est épitaxié à une température de 300° C maximum et lors d’une seconde étape de formation de film dans laquelle le GaN est épitaxié sur le film GaN formé dans la première étape de formation de film à une température de 550° C minimum.
(JA)GaN膜を有する窒化物半導体素子(10)は、表面が平坦課されたZnO基板(11)の表面上に、GaN層(12)が形成される。GaN層(12)は、300℃以下の温度でGaNをエピタキシャル成長させる第1の成膜工程と、上記第1の成膜工程により成膜されたGaN上に、550℃以上の温度でGaNをエピタキシャル成長させる第2の成膜工程とにより成膜される。
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, KE, KG, KM, KN, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, LY, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RU, SC, SD, SE, SG, SK, SL, SM, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, YU, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, LV, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)