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1. WO2006054737 - GALLIUM NITRIDE-BASED SEMICONDUCTOR STACKED STRUCTURE, METHOD FOR FABRICATION THEREOF, GALLIUM NITRIDE-BASED SEMICONDUCTOR DEVICE AND LAMP USING THE DEVICE

Publication Number WO/2006/054737
Publication Date 26.05.2006
International Application No. PCT/JP2005/021327
International Filing Date 15.11.2005
IPC
H01L 33/06 2010.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
04with a quantum effect structure or superlattice, e.g. tunnel junction
06within the light emitting region, e.g. quantum confinement structure or tunnel barrier
H01L 33/12 2010.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
12with a stress relaxation structure, e.g. buffer layer
H01L 33/16 2010.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
16with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
H01L 33/32 2010.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
26Materials of the light emitting region
30containing only elements of group III and group V of the periodic system
32containing nitrogen
H01L 33/36 2010.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
36characterised by the electrodes
CPC
H01L 33/007
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
005Processes
0062for devices with an active region comprising only III-V compounds
0066with a substrate not being a III-V compound
007comprising nitride compounds
H01L 33/04
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
04with a quantum effect structure or superlattice, e.g. tunnel junction
H01L 33/20
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
20with a particular shape, e.g. curved or truncated substrate
H01L 33/38
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
36characterised by the electrodes
38with a particular shape
Applicants
  • SHOWA DENKO K.K. [JP]/[JP] (AllExceptUS)
  • UDAGAWA, Takashi [JP]/[JP] (UsOnly)
Inventors
  • UDAGAWA, Takashi
Agents
  • FUKUDA, Kenzo
Priority Data
2004-33451718.11.2004JP
60/631,98701.12.2004US
Publication Language English (en)
Filing Language English (EN)
Designated States
Title
(EN) GALLIUM NITRIDE-BASED SEMICONDUCTOR STACKED STRUCTURE, METHOD FOR FABRICATION THEREOF, GALLIUM NITRIDE-BASED SEMICONDUCTOR DEVICE AND LAMP USING THE DEVICE
(FR) STRUCTURE EMPILÉE SEMI-CONDUCTRICE À BASE DE NITRURE DE GALLIUM, PROCÉDÉ DE FABRICATION IDOINE, DISPOSITIF SEMI-CONDUCTEUR À BASE DE NITRURE DE GALLIUM ET LAMPE UTILISANT LE DISPOSITIF
Abstract
(EN) A gallium nitride-based semiconductor stacked structure includes a single crystal substrate, a low-temperature buffer layer grown at a low temperature in a region contiguous to the single crystal substrate and a gallium nitride-based semiconductor layer overlying the low-temperature buffer layer. The low-temperature buffer layer possesses therein a single crystal layer formed of a hexagonal A1XGaϝN-based Group III nitride material containing gallium predominantly over aluminum, wherein 0.5 < ϝ ≤ 1 and X + ϝ = 1. The single crystal layer has crystal defects at a smaller density on a (1.0.-1.0.) crystal face than on a (1.1.-2.0.) crystal face. A method for the production of the gallium nitride-based semiconductor stacked structure includes forming on a single crystal substrate a low-temperature buffer layer grown at a low temperature falling in a range of 250°C to 500°C, forming a gallium nitride-based semiconductor layer on the low-temperature buffer layer and forming in the low-temperature buffer layer a single crystal layer made of a hexagonal AlXGaϝN-based Group III nitride material containing gallium predominantly over aluminum, in which 0.5 < ϝ ≤1,X + ϝ = 1, by causing gallium raw material to reach the surface of the substrate before aluminum raw material.
(FR) L’invention concerne une structure empilée semi-conductrice à base de nitrure de gallium comprenant un substrat de simple cristal, une couche tampon basse température cultivée à basse température dans une région contiguë du substrat de simple cristal et une couche semi-conductrice à base de nitrure de gallium recouvrant la couche tampon basse température. A l’intérieur de la couche tampon basse température se trouve une couche de simple cristal constituée d’un matériau hexagonal de nitrure de groupe III à base de A1XGaϝN contenant du gallium principalement sur de l’aluminium, où 0,5 < ϝ ≤ 1 et X + ϝ = 1. La couche de simple cristal présente des défauts cristallins d’une densité plus petite sur une face de cristal (1.0.-1.0.) que sur une face de cristal (1.1.-2.0.). L’invention porte sur un procédé de fabrication de la structure empilée semi-conductrice à base de nitrure de gallium consistant à former sur un substrat de simple cristal une couche tampon basse température cultivée à une basse température entrant dans une fourchette de 250°C à 500°C, à élaborer une couche semi-conductrice à base de nitrure de gallium sur la couche tampon basse température et à constituer dans la couche tampon basse température une couche de simple cristal faite d’un matériau de nitrure de groupe III à base de AlXGaϝN contenant du gallium principalement sur de l’aluminium, où 0,5 < ϝ ≤1,X + ϝ = 1, en faisant en sorte que la matière première de gallium atteigne la surface du substrat avant la matière première d’aluminium.
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