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1. WO2006054469 - FERROMAGNETIC FILM, MAGNETIC RESISTANCE ELEMENT AND MAGNETIC RANDOM ACCESS MEMORY

Publication Number WO/2006/054469
Publication Date 26.05.2006
International Application No. PCT/JP2005/020539
International Filing Date 09.11.2005
IPC
H01F 10/16 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
FMAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
10Thin magnetic films, e.g. of one-domain structure
08characterised by magnetic layers
10characterised by the composition
12being metals or alloys
16containing cobalt
H01F 10/32 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
FMAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
10Thin magnetic films, e.g. of one-domain structure
32Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
H01L 21/8246 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
78with subsequent division of the substrate into plural individual devices
82to produce devices, e.g. integrated circuits, each consisting of a plurality of components
822the substrate being a semiconductor, using silicon technology
8232Field-effect technology
8234MIS technology
8239Memory structures
8246Read-only memory structures (ROM)
H01L 27/105 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04the substrate being a semiconductor body
10including a plurality of individual components in a repetitive configuration
105including field-effect components
H01L 43/08 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
43Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
08Magnetic-field-controlled resistors
H01L 43/10 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
43Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
10Selection of materials
CPC
B82Y 25/00
BPERFORMING OPERATIONS; TRANSPORTING
82NANOTECHNOLOGY
YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
25Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
G11C 11/15
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
11Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
02using magnetic elements
14using thin-film elements
15using multiple magnetic layers
H01F 10/3227
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
FMAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
10Thin magnetic films, e.g. of one-domain structure
32Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
3227Exchange coupling via one or more magnetisable ultrathin or granular films
H01F 10/3254
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
FMAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
10Thin magnetic films, e.g. of one-domain structure
32Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
324Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
3254the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]
H01L 43/10
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
43Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
10Selection of materials
Y10T 428/1107
YSECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
10TECHNICAL SUBJECTS COVERED BY FORMER USPC
TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
428Stock material or miscellaneous articles
11Magnetic recording head
1107Magnetoresistive
Applicants
  • 日本電気株式会社 NEC CORPORATION [JP]/[JP] (AllExceptUS)
  • 株式会社 東芝 Kabushiki Kaisha Toshiba [JP]/[JP] (AllExceptUS)
  • 石綿 延行 ISHIWATA, Nobuyuki [JP]/[JP] (UsOnly)
  • 本庄 弘明 HONJO, Hiroaki [JP]/[JP] (UsOnly)
  • 西山 勝哉 NISHIYAMA, Katsuya [JP]/[JP] (UsOnly)
  • 永瀬 俊彦 NAGASE, Toshihiko [JP]/[JP] (UsOnly)
Inventors
  • 石綿 延行 ISHIWATA, Nobuyuki
  • 本庄 弘明 HONJO, Hiroaki
  • 西山 勝哉 NISHIYAMA, Katsuya
  • 永瀬 俊彦 NAGASE, Toshihiko
Agents
  • 工藤 実 KUDOH, Minoru
Priority Data
2004-33817722.11.2004JP
2005-17681916.06.2005JP
Publication Language Japanese (ja)
Filing Language Japanese (JA)
Designated States
Title
(EN) FERROMAGNETIC FILM, MAGNETIC RESISTANCE ELEMENT AND MAGNETIC RANDOM ACCESS MEMORY
(FR) FILM FERROMAGNÉTIQUE, ÉLÉMENT DE RÉSISTANCE MAGNÉTIQUE ET MÉMOIRE À ACCÈS ALÉATOIRE MAGNÉTIQUE
(JA) 強磁性膜、磁気抵抗素子、及び磁気ランダムアクセスメモリ
Abstract
(EN) A ferromagnetic film which comprises a ferromagnetic element and a non-magnetic element and has a first portion and a second portion, wherein the first portion has a concentration of a non-magnetic element lower than the average concentration of the non-magnetic element in the ferromagnetic film, and the second portion has a concentration of a non-magnetic element higher than the average concentration of the non-magnetic element in the ferromagnetic film, and wherein the non-magnetic element comprises at least one element selected from the group consisting of Zr, Ti, Nb, Ta, Hf, Mo and W. The above ferromagnetic film is applied to a magnetic free layer of a magnetic resistance element in MRAM.
(FR) L’invention concerne un film ferromagnétique comprenant un élément ferromagnétique et un élément non magnétique, possédant une première portion et une seconde portion, ladite première portion ayant une concentration d’un élément non magnétique inférieure à la concentration moyenne de l’élément non magnétique dans le film ferromagnétique, et la seconde portion ayant une concentration d’un élément non magnétique supérieure à la concentration moyenne de l’élément non magnétique dans le film ferromagnétique, et l’élément non magnétique comprenant au moins un élément sélectionné parmi le groupe consistant en Zr, Ti, Nb, Ta, Hf, Mo et W. Le film ferromagnétique ci-dessus est appliqué à une couche libre magnétique d’un élément de résistance magnétique dans une MRAM.
(JA)  本発明に係る強磁性膜は、強磁性元素と非磁性元素とを含み、第1部分と第2部分とを有する。第1部分における非磁性元素の濃度は、強磁性膜中に占める非磁性元素の平均濃度より低い。一方、第2部分における非磁性元素の濃度は、強磁性膜中に占める非磁性元素の平均濃度より高い。また、非磁性元素は、Zr,Ti,Nb,Ta,Hf,Mo,Wからなる群から選択される少なくとも一種類の元素を含む。この強磁性膜は、MRAM中の磁気抵抗素子が有する磁化自由層に適用される。
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