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1. WO2006054407 - ELECTROSTATIC CHUCK FOR VACUUM BONDING EQUIPMENT AND VACUUM BONDING EQUIPMENT USING THE SAME

Publication Number WO/2006/054407
Publication Date 26.05.2006
International Application No. PCT/JP2005/018679
International Filing Date 11.10.2005
Chapter 2 Demand Filed 04.01.2006
IPC
G09F 9/00 2006.1
GPHYSICS
09EDUCATING; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
FDISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
9Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
G02F 1/13 2006.1
GPHYSICS
02OPTICS
FDEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
1Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
01for the control of the intensity, phase, polarisation or colour
13based on liquid crystals, e.g. single liquid crystal display cells
H01L 21/683 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
683for supporting or gripping
CPC
H01L 21/6833
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; ; Apparatus not specifically provided for elsewhere
683for supporting or gripping
6831using electrostatic chucks
6833Details of electrostatic chucks
Applicants
  • 信越エンジニアリング株式会社 SHIN-ETSU ENGINEERING CO., LTD. [JP]/[JP] (AllExceptUS)
  • 株式会社巴川製紙所 TOMOEGAWA PAPER CO., LTD. [JP]/[JP] (AllExceptUS)
  • 大谷 義和 OHTANI, Yoshikazu [JP]/[JP] (UsOnly)
  • 島 武志 SHIMA, Takeshi [JP]/[JP] (UsOnly)
  • 川瀬 律 KAWASE, Ritsu [JP]/[JP] (UsOnly)
Inventors
  • 大谷 義和 OHTANI, Yoshikazu
  • 島 武志 SHIMA, Takeshi
  • 川瀬 律 KAWASE, Ritsu
Agents
  • 細井 貞行 HOSOI, Sadayuki
Priority Data
2004-31617329.10.2004JP
Publication Language Japanese (ja)
Filing Language Japanese (JA)
Designated States
Title
(EN) ELECTROSTATIC CHUCK FOR VACUUM BONDING EQUIPMENT AND VACUUM BONDING EQUIPMENT USING THE SAME
(FR) MANDRIN ELECTROSTATIQUE POUR MATERIEL DE SOUDAGE SOUS VIDE ET MATERIEL DE SOUDAGE SOUS VIDE L’UTILISANT
(JA) 真空貼り合わせ装置用静電チャック及びそれを用いた真空貼り合わせ装置
Abstract
(EN) [PROBLEMS] To prevent breakage of an electrostatic attraction functioning part due to biting of a foreign material. [MEANS FOR SOLVING PROBLEMS] At least one layer of a dielectric protecting layer (1c) having a prescribed thickness is provided on a surface of a dielectric layer (1b). A portion between a board contact plane (1’) of the dielectric protecting layer (1c) arranged on the outermost side and an electrode layer (1a) is permitted to have a laminate structure composed of a plurality of layers. A distance between the board contact plane (1’) and the electrode layer (1a) is increased by the thickness of the dielectric protecting layer (1c). Thus, probability of causing damage to the electrode layer (1a) due to biting of a large foreign material is reduced, and at the same time, even when the board contact plane (1’) of the dielectric protecting layer (1c) is scratched by biting of a small foreign material, a crack does not reach the dielectric layer (1a) by being prevented from advancing by the dielectric protecting layer (1c). When the layer constitution is divided while maintaining the entire thickness from the board contact plane (1’) to the electrode layer (1a) substantially the same, the crack does not reach the dielectric layer (1a) by being prevented from advancing by the dielectric protecting layer (1c) in the same manner.
(FR) L’invention vise à empêcher les fuites d’une partie fonctionnant par attraction électrostatique dues à la morsure d’un corps étranger. Selon l’invention, au moins une couche d’une couche de protection diélectrique (1c) présentant une épaisseur prescrite est formée sur une surface d’une couche diélectrique (1b). Une partie entre un plan de contact de plaquette (1’) de la couche de protection diélectrique (1c) disposée du côté situé le plus à l’extérieur et une couche d’électrode (1a) est dotée d’une structure stratifiée composée d’une pluralité de couches. Une distance entre le plan de contact de plaquette (1’) et la couche d’électrode (1a) est augmentée de l’épaisseur de la couche de protection diélectrique (1c). Il est donc possible de réduire les risques d’endommagement de la couche d’électrode (1a) par la morsure d’un gros corps étranger. De plus, même en cas de rayure du plan de contact de plaquette (1’) de la couche de protection diélectrique par la morsure d’un petit corps étranger, une fissure ne parvient pas à atteindre la couche diélectrique (1a) du fait que sa progression est bloquée par la couche de protection diélectrique (1c). Lors d’une division de la structure en couches tout en maintenant la distance entre le plan de contact de plaquette (1’) et la couche d’électrode (1a) sensiblement constante, la fissure n’atteint pas non plus la couche diélectrique (1a) du fait que sa progression est également bloquée par la couche de protection diélectrique (1c).
(JA)  【課題】 異物の噛み込みによる静電吸着機能部の破損を防止する。  【解決手段】 誘電層1bの表面に所定厚さの誘電保護層1cを少なくとも一層以上設け、その最も表面側に配置された誘電保護層1cの基板接触面1′から電極層1aまでの間を複数層からなる積層構造にして、これら基板接触面1′から電極層1aまでの距離を上記誘電保護層1cの厚み分だけ広げることにより、大きな異物の噛み込みに伴う電極層1aへのダメージの確率が減少すると同時に、小さい異物の噛み込みで誘電保護層1cの基板接触面1′が傷付いても、誘電保護層1cでクラックの進行が抑えられて誘電層1aまで至らず、また該基板接触面1′から電極層1aまでの全体厚さを略同じに維持しつつ層の構成を分割した場合も、同様に誘電保護層1cでクラックの進行が抑えられて誘電層1aまで至らない。  
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