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1. WO2006053846 - SEMICONDUCTOR SWITCHING MODULE

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Publication Number WO/2006/053846
Publication Date 26.05.2006
International Application No. PCT/EP2005/055821
International Filing Date 08.11.2005
IPC
H01L 25/07 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
25Assemblies consisting of a plurality of individual semiconductor or other solid state devices
03all the devices being of a type provided for in the same subgroup of groups H01L27/-H01L51/128
04the devices not having separate containers
07the devices being of a type provided for in group H01L29/78
H01L 23/467 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
34Arrangements for cooling, heating, ventilating or temperature compensation
46involving the transfer of heat by flowing fluids
467by flowing gases, e.g. air
CPC
H01L 2224/24051
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
18High density interconnect [HDI] connectors; Manufacturing methods related thereto
23Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
24of an individual high density interconnect connector
2405Shape
24051Conformal with the semiconductor or solid-state device
H01L 2224/24226
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
18High density interconnect [HDI] connectors; Manufacturing methods related thereto
23Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
24of an individual high density interconnect connector
241Disposition
24151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
24221the body and the item being stacked
24225the item being non-metallic, e.g. insulating substrate with or without metallisation
24226the HDI interconnect connecting to the same level of the item at which the semiconductor or solid-state body is mounted, e.g. the item being planar
H01L 23/467
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
34Arrangements for cooling, heating, ventilating or temperature compensation ; ; Temperature sensing arrangements
46involving the transfer of heat by flowing fluids
467by flowing gases, e.g. air
H01L 24/24
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
24Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
18High density interconnect [HDI] connectors; Manufacturing methods related thereto
23Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
24of an individual high density interconnect connector
H01L 24/82
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
24Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
82by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI]
H01L 25/072
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
25Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; ; Multistep manufacturing processes thereof
03all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L51/00, e.g. assemblies of rectifier diodes
04the devices not having separate containers
07the devices being of a type provided for in group H01L29/00
072the devices being arranged next to each other
Applicants
  • SIEMENS AKTIENGESELLSCHAFT [DE]/[DE] (AllExceptUS)
  • APFELBACHER, Walter [DE]/[DE] (UsOnly)
  • REICHENBACH, Norbert [DE]/[DE] (UsOnly)
  • SEITZ, Johann [DE]/[DE] (UsOnly)
Inventors
  • APFELBACHER, Walter
  • REICHENBACH, Norbert
  • SEITZ, Johann
Common Representative
  • SIEMENS AKTIENGESELLSCHAFT
Priority Data
10 2004 056 111.719.11.2004DE
Publication Language German (de)
Filing Language German (DE)
Designated States
Title
(DE) HALBLEITERSCHALTMODUL
(EN) SEMICONDUCTOR SWITCHING MODULE
(FR) MODULE COMMUTATEUR SEMI-CONDUCTEUR
front page image
Abstract
(DE) Die Erfindung betrifft ein Halbleiterschaltmodul (1), mit ei¬ nem in Planar-Technologie ausgeführten Leistungshalbleiter¬ element (210,310) und einem, das Leistungshalbleiterelement (210,310) zumindest auf einer Seite (10) vollständig um¬ schließenden Modulgehäuse (220,320) . Dabei ist an zwei, sich im Wesentlichen gegenüberliegenden Stellen des Modulgehäuses (220,320) jeweils zumindest eine Öffnung (220 Λ,220 Λ Λ, 320 Λ, 320 Λ Λ) so vorgesehen, dass zum Kühlen des Leistungshalbleiterelements (210,310) eine Luftströmung über der Seite (10) des Leistungshalbleiterelements (210,310) be- wirkt wird, die vom Modulgehäuse (220,320) umschlossen ist.
(EN) The invention relates to a semiconductor switching module (1) comprising a power semiconductor element (210, 310) with a planar configuration and a module housing (220, 320) that completely surrounds at least one face (10) of the power semiconductor element (210, 310). At least one opening (220', 220'', 320', 320'') is provided at two respective, essentially opposing points of the module housing (220, 320) in such a way that to cool the power semiconductor component (210, 310), an air stream flows over the face (10) of the power semiconductor element (210, 310) that is surrounded by the module housing (220, 320).
(FR) L'invention concerne un module commutateur semi-conducteur (1) comprenant un élément semi-conducteur de puissance (210,310) réalisé selon la technologie planaire et un boîtier (220,320) de module entourant entièrement l'élément semi-conducteur de puissance (210,310) au moins sur une face (10). En deux emplacements sensiblement opposés du boîtier (220,320) de module, se trouve au moins une ouverture (220',220'', 320', 320''), de sorte que le refroidissement de l'élément semi-conducteur de puissance (210,310) est assuré par un flux d'air s'écoulant sur la face (10) de l'élément semi-conducteur de puissance (210,310) qui est entourée par le boîtier (220,320) de module.
Related patent documents
DE102004056111
EP1844497
Latest bibliographic data on file with the International Bureau
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