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1. WO2006052625 - CONTROL OF THRESHOLD VOLTAGE IN ORGANIC FIELD EFFECT TRANSISTORS

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Publication Number WO/2006/052625
Publication Date 18.05.2006
International Application No. PCT/US2005/039734
International Filing Date 03.11.2005
IPC
H01L 51/40 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
05specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier
40Processes or apparatus specially adapted for the manufacture or treatment of such devices or of parts thereof
H01L 51/10 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
05specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier
10Details of devices
CPC
H01L 51/0512
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
05specially adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential- jump barrier or surface barrier ; multistep processes for their manufacture
0504the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or swiched, e.g. three-terminal devices
0508Field-effect devices, e.g. TFTs
0512insulated gate field effect transistors
H01L 51/0516
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
05specially adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential- jump barrier or surface barrier ; multistep processes for their manufacture
0504the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or swiched, e.g. three-terminal devices
0508Field-effect devices, e.g. TFTs
0512insulated gate field effect transistors
0516characterised by the gate dielectric
H01L 51/052
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
05specially adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential- jump barrier or surface barrier ; multistep processes for their manufacture
0504the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or swiched, e.g. three-terminal devices
0508Field-effect devices, e.g. TFTs
0512insulated gate field effect transistors
0516characterised by the gate dielectric
052the gate dielectric comprising only organic materials
H01L 51/0545
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
05specially adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential- jump barrier or surface barrier ; multistep processes for their manufacture
0504the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or swiched, e.g. three-terminal devices
0508Field-effect devices, e.g. TFTs
0512insulated gate field effect transistors
0545Lateral single gate single channel transistors with inverted structure, i.e. the organic semiconductor layer is formed after the gate electrode
Applicants
  • MASSACHUSETTS INSTITUTE OF TECHNOLOGY [US]/[US] (AllExceptUS)
  • AKINWANDE, Akintunde, I. [US]/[US] (UsOnly)
  • BULOVIC, Vladimir [US]/[US] (UsOnly)
  • KYMISSIS, Ioannis [US]/[US] (UsOnly)
  • WANG, Annie, I. [US]/[US] (UsOnly)
Inventors
  • AKINWANDE, Akintunde, I.
  • BULOVIC, Vladimir
  • KYMISSIS, Ioannis
  • WANG, Annie, I.
Agents
  • CONNORS, Matthew, E.
Priority Data
60/624,58603.11.2004US
Publication Language English (en)
Filing Language English (EN)
Designated States
Title
(EN) CONTROL OF THRESHOLD VOLTAGE IN ORGANIC FIELD EFFECT TRANSISTORS
(FR) COMMANDE D’UNE TENSION DE SEUIL DANS DES TRANSISTORS A EFFET DE CHAMP ORGANIQUES
front page image
Abstract
(EN) A field effect transistor (FET) includes a substrate, and a gate layer formed on the substrate. An oxygen plasmarized polymeric gate dielectric is formed on the gate layer so as to increase the threshold voltage of the OFET. A semiconductor layer is formed on the oxygen plasmarized polymeric gate dielectric.
(FR) Transistor à effet de champ (FET) comprenant un substrat et une couche grille formée sur le substrat. Un diélectrique grille de plasma-polymère à l’oxygène est formé sur la couche grille afin d’augmenter la tension de seuil du OFET. Une couche à semi-conducteur est formée sur le diélectrique grille de plasma-polymère à l’oxygène.
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