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1. WO2006051995 - FIELD EFFECT TRANSISTOR EMPLOYING AN AMORPHOUS OXIDE

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Publication Number WO/2006/051995
Publication Date 18.05.2006
International Application No. PCT/JP2005/020982
International Filing Date 09.11.2005
Chapter 2 Demand Filed 08.09.2006
IPC
H01L 29/786 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76Unipolar devices
772Field-effect transistors
78with field effect produced by an insulated gate
786Thin-film transistors
H01L 21/363 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
34the devices having semiconductor bodies not provided for in groups H01L21/06, H01L21/16, and H01L21/18159
36Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
363using physical deposition, e.g. vacuum deposition, sputtering
CPC
H01L 21/02422
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02365Forming inorganic semiconducting materials on a substrate
02367Substrates
0237Materials
02422Non-crystalline insulating materials, e.g. glass, polymers
H01L 21/02554
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02365Forming inorganic semiconducting materials on a substrate
02518Deposited layers
02521Materials
02551Group 12/16 materials
02554Oxides
H01L 21/02565
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02365Forming inorganic semiconducting materials on a substrate
02518Deposited layers
02521Materials
02565Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
H01L 21/02631
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02365Forming inorganic semiconducting materials on a substrate
02612Formation types
02617Deposition types
02631Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
H01L 29/4908
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
40Electrodes ; ; Multistep manufacturing processes therefor
43characterised by the materials of which they are formed
49Metal-insulator-semiconductor electrodes, ; e.g. gates of MOSFET
4908for thin film semiconductor, e.g. gate of TFT
H01L 29/51
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
40Electrodes ; ; Multistep manufacturing processes therefor
43characterised by the materials of which they are formed
49Metal-insulator-semiconductor electrodes, ; e.g. gates of MOSFET
51Insulating materials associated therewith
Applicants
  • CANON KABUSHIKI KAISHA [JP]/[JP] (AllExceptUS)
  • TOKYO INSTITUTE OF TECHNOLOGY [JP]/[JP] (AllExceptUS)
  • SANO, Masafumi [JP]/[JP] (UsOnly)
  • NAKAGAWA, Katsumi [JP]/[JP] (UsOnly)
  • HOSONO, Hideo [JP]/[JP] (UsOnly)
  • KAMIYA, Toshio [JP]/[JP] (UsOnly)
  • NOMURA, Kenji [JP]/[JP] (UsOnly)
Inventors
  • SANO, Masafumi
  • NAKAGAWA, Katsumi
  • HOSONO, Hideo
  • KAMIYA, Toshio
  • NOMURA, Kenji
Agents
  • OKABE, Masao
Priority Data
2004-32668310.11.2004JP
Publication Language English (en)
Filing Language English (EN)
Designated States
Title
(EN) FIELD EFFECT TRANSISTOR EMPLOYING AN AMORPHOUS OXIDE
(FR) TRANSISTOR A EFFET DE CHAMP UTILISANT UN OXYDE AMORPHE
front page image
Abstract
(EN) A novel field-effect transistor is provided which employs an amorphous oxide. In an embodiment of the present invention, the transistor comprises an amorphous oxide layer containing electron carrier at a concentration less than 1 ˜10-18/cm3, and the gate-insulating layer is comprised of a first layer being in contact with the amorphous oxide and a second layer different from the first layer.
(FR) L'invention concerne un nouveau transistor à effet de champ utilisant un oxyde amorphe. Dans un mode de réalisation, l'invention concerne un transistor comprenant une couche d'oxyde amorphe qui contient un porteur d'électrons à une concentration inférieure à 1x10-18/cm3, et une couche d'isolation de grille composée d'une première couche en contact avec l'oxyde amorphe et d'une seconde couche différente de la première.
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