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1. WO2006049817 - SYSTEMS AND METHODS FOR ION BEAM FOCUSING

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Publication Number WO/2006/049817
Publication Date 11.05.2006
International Application No. PCT/US2005/036509
International Filing Date 12.10.2005
IPC
H01J 37/317 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
30Electron-beam or ion-beam tubes for localised treatment of objects
317for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation
H01J 37/147 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
02Details
04Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
147Arrangements for directing or deflecting the discharge along a desired path
CPC
H01J 37/147
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
02Details
04Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
147Arrangements for directing or deflecting the discharge along a desired path
H01J 37/30
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
30Electron-beam or ion-beam tubes for localised treatment of objects
H01J 37/317
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
30Electron-beam or ion-beam tubes for localised treatment of objects
317for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
H01J 37/3171
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
30Electron-beam or ion-beam tubes for localised treatment of objects
317for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
3171for ion implantation
Applicants
  • AXCELIS TECHNOLOGIES, INC. [US]/[US] (AllExceptUS)
  • BENVENISTE, Victor [US]/[US] (UsOnly)
  • KELLERMAN, Peter [US]/[US] (UsOnly)
Inventors
  • BENVENISTE, Victor
  • KELLERMAN, Peter
Priority Data
10/967,85518.10.2004US
Publication Language English (en)
Filing Language English (EN)
Designated States
Title
(EN) SYSTEMS AND METHODS FOR ION BEAM FOCUSING
(FR) SYSTEMES ET PROCEDES DE FOCALISATION DE FAISCEAUX D'IONS
front page image
Abstract
(EN) Systems and methods are provided for focusing a scanned ion beam in an ion implanter (110). A beam focusing system (140) is provided, comprising first and second magnets providing corresponding magnetic fields that cooperatively provide a magnetic focusing field having a time-varying focusing field center generally corresponding to a time-varying beam position of a scanned ion beam along a scan direction. Methods are presented, comprising providing a focusing field having a focusing field center in the scan plane, and dynamically adjusting the focusing field such that the focusing field center is generally coincident with a time-varying beam position of the scanned ion beam along the scan direction.
(FR) L'invention concerne des systèmes et des procédés permettant de focaliser un faisceau d'ions balayé dans un implanteur ionique. Un système de focalisation de faisceaux comprend un premier aimant et un second aimant produisant des champs magnétiques correspondants qui coopèrent pour produire un champ de focalisation magnétique présentant un centre de champ de focalisation variant dans le temps correspondant généralement à une position variant dans le temps d'un faisceau d'ions balayé le long d'une direction de balayage. Des procédés consistent à créer un champ de focalisation comprenant un centre de champ de focalisation sur le plan de balayage et à régler dynamiquement le champ de focalisation de sorte que le centre de champ de focalisation coïncide généralement avec une position variant dans le temps du faisceau d'ions balayé le long de la direction de balayage.
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