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1. WO2006049076 - PLASMA PROCESSING METHOD AND PLASMA PROCESSING APPARATUS

Publication Number WO/2006/049076
Publication Date 11.05.2006
International Application No. PCT/JP2005/019778
International Filing Date 27.10.2005
Chapter 2 Demand Filed 01.09.2006
IPC
H01L 21/265 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
26Bombardment with wave or particle radiation
263with high-energy radiation
265producing ion implantation
CPC
H01J 37/32642
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
32Gas-filled discharge tubes, ; e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions
32431Constructional details of the reactor
32623Mechanical discharge control means
32642Focus rings
H01L 21/2236
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
22Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; ; Interactions between two or more impurities; Redistribution of impurities
223using diffusion into or out of a solid from or into a gaseous phase
2236from or into a plasma phase
H01L 21/67069
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; ; Apparatus not specifically provided for elsewhere
67005Apparatus not specifically provided for elsewhere
67011Apparatus for manufacture or treatment
67017Apparatus for fluid treatment
67063for etching
67069for drying etching
H01L 21/68735
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; ; Apparatus not specifically provided for elsewhere
683for supporting or gripping
687using mechanical means, e.g. chucks, clamps or pinches
68714the wafers being placed on a susceptor, stage or support
68735characterised by edge profile or support profile
Applicants
  • 松下電器産業株式会社 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. [JP]/[JP] (AllExceptUS)
  • 奥村 智洋 OKUMURA, Tomohiro (UsOnly)
  • 佐々木 雄一朗 SASAKI, Yuichiro (UsOnly)
  • 岡下 勝己 OKASHITA, Katsumi (UsOnly)
  • 金 成国 JIN, Cheng-Guo (UsOnly)
  • 前嶋 聡 MAESHIMA, Satoshi (UsOnly)
  • 伊藤 裕之 ITO, Hiroyuki (UsOnly)
  • 中山 一郎 NAKAYAMA, Ichiro (UsOnly)
  • 水野 文二 MIZUNO, Bunji (UsOnly)
Inventors
  • 奥村 智洋 OKUMURA, Tomohiro
  • 佐々木 雄一朗 SASAKI, Yuichiro
  • 岡下 勝己 OKASHITA, Katsumi
  • 金 成国 JIN, Cheng-Guo
  • 前嶋 聡 MAESHIMA, Satoshi
  • 伊藤 裕之 ITO, Hiroyuki
  • 中山 一郎 NAKAYAMA, Ichiro
  • 水野 文二 MIZUNO, Bunji
Agents
  • 高松 猛 TAKAMATSU, Takeshi
Priority Data
2004-31935202.11.2004JP
Publication Language Japanese (ja)
Filing Language Japanese (JA)
Designated States
Title
(EN) PLASMA PROCESSING METHOD AND PLASMA PROCESSING APPARATUS
(FR) PROCÉDÉ DE TRAITEMENT AU PLASMA ET APPAREIL DE TRAITEMENT AU PLASMA
(JA) プラズマ処理方法およびプラズマ処理装置
Abstract
(EN) A plasma processing method and apparatus capable of enhancing the uniformity of crystalline-to-amorphous transformation. While introducing a predetermined gas through a gas inlet port (11) into a vacuum vessel (1) from gas supply (2), the gas in the vacuum vessel (1) is discharged through a discharge port (12) by means of a turbo molecular pump (3) serving as an evacuating device, and the pressure in the vacuum vessel (1) is kept at a predetermined pressure by a pressure regulating valve (4). High-frequency power of 13.56 MHz is supplied to a coil (8) provided near a dielectric window (7) opposed to a sample electrode (6) by a high-frequencypower supply (5), and inductive-coupling plasma is produced in the vacuum vessel (1). A high-frequency power supply (10 for supplying high-frequency power to the sample electrode (6) is provided and functions as a voltage source for controlling the potential of the sample electrode (6). By devising the constitution of the sample electrode (6), the crystalline layer in the surface of a silicon substrate (9) could be transformed into an amorphous one uniformly.
(FR) L’invention concerne un procédé de traitement au plasma et un appareil capable d’augmenter l’uniformité de la transformation de couche cristalline en couche amorphe. Tout en introduisant un gaz prédéterminé à travers un orifice d’injection de gaz (11) dans une cuve sous pression (1) depuis une arrivée de gaz (2), le gaz dans la cuve sous pression (1) est refoulé à travers un orifice de décharge (12) à l’aide d’une pompe turbo moléculaire (3) faisant office de dispositif d’évacuation, et la pression dans la cuve sous pression (1) est maintenue à une pression prédéterminée par une valve de régulation de pression (4). Une alimentation haute fréquence de 13,56 MHz est injectée dans une bobine (8) disposée près d’une fenêtre diélectrique (7) opposée à une électrode échantillon (6) par une alimentation haute fréquence (5), et un plasma de couplage à induction est produit dans la cuve sous pression (1). Une alimentation haute fréquence (10) permet d’injecter une alimentation haute fréquence dans l’électrode échantillon (6) et sert de source de tension pour contrôler le potentiel de l’électrode échantillon (6). La conception de la constitution de l’électrode échantillon (6) permet de transformer la couche cristalline dans la surface d’un substrat de silicium (9) en couche amorphe de manière uniforme.
(JA)  非晶質化処理の均一性を高めることが可能なプラズマ処理方法および装置を提供する。  真空容器1内に、ガス供給装置2からガス導入口11を介して所定のガスを導入しつつ、排気装置としてのターボ分子ポンプ3により排気口12を介して排気を行い、調圧弁4により真空容器1内を所定の圧力に保つ。高周波電源5により13.56MHzの高周波電力を試料電極6に対向した誘電体窓7の近傍に設けられたコイル8に供給することにより、真空容器1内に誘導結合型プラズマを発生させる。試料電極6に高周波電力を供給するための高周波電源10が設けられており、これは、試料電極6の電位を制御する電圧源として機能する。試料電極6の構成を工夫することにより、シリコン基板9の表面の結晶層を均一に非晶質化することができた。
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